Hot Wall Epitaxy (HWE)법에 의한 ZnIn2Se4 단결정 후막 성장과 열처리 효과
Growth and effect of thermal annealing for ZnIn2Se4 single crystalline thick film by hot wall epitaxy
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Single crystalline ZnIn2Se4 layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at 400 oC with hot wall epitaxy (HWE) system by evaporating ZnIn2Se4 source at 630 oC. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ZnIn2Se4 single crystalline thick films measured from Hall effect by van der Pauw method are 9.41×1016 cm−.3 and 292 cm2/V·s at 293 K, respectively. The temperature dependence of the energy band gap of the ZnIn2Se4 obtained from the absorption spectra was well described by the Varshni’s relation, Eg(T)=1.8622 eV−(5.23×10−4 eV/K)T2/(T + 775.5 K). After the as-grown ZnIn2Se4 single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ZnIn2Se4 single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of VZn, VSe, Znint, and Seint obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ZnIn2Se4 single crystalline thick films to an optical p-type. Also, we confirmed that In in ZnIn2Se4/GaAs did not form the native defects because In in ZnIn2Se4 single crystalline thick films existed in the form of stable bonds.
Abstract
Single crystalline ZnIn2Se4 layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at 400 oC with hot wall epitaxy (HWE) system by evaporating ZnIn2Se4 source at 630 oC. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ZnIn2Se4 single crystalline thick films measured from Hall effect by van der Pauw method are 9.41×1016 cm−.3 and 292 cm2/V·s at 293 K, respectively. The temperature dependence of the energy band gap of the ZnIn2Se4 obtained from the absorption spectra was well described by the Varshni’s relation, Eg(T)=1.8622 eV−(5.23×10−4 eV/K)T2/(T + 775.5 K). After the as-grown ZnIn2Se4 single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ZnIn2Se4 single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of VZn, VSe, Znint, and Seint obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ZnIn2Se4 single crystalline thick films to an optical p-type. Also, we confirmed that In in ZnIn2Se4/GaAs did not form the native defects because In in ZnIn2Se4 single crystalline thick films existed in the form of stable bonds.
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