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PEI가 코팅된 CVD 그래핀의 저항 온도 계수 측정

Measurements of the temperature coefficient of resistance of CVD-grown graphene coated with PEI

석지원|임수묵
한국복합재료학회 (The Korean Society For Composite Materials)|2023.10|Composites Research|제36권 제5호|pp. 342-348

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키워드

graphenedoping도핑온도 센서temperature sensor그래핀저항 온도 계수temperature coefficient of resistance
주제분류재료공학

초록

최근 웨어러블 소자를 이용한 신체와 주변 온도의 실시간 모니터링에 대한 수요가 급격히 증가하고 있다. 그래핀 기반 써미스터가 고성능 유연 온도 센서로 개발되어 왔다. 본 연구에서는 단일층 그래핀의 온도 측정 성능을 개선하기 위하여 표면에 polyethylenimine(PEI)를 코팅하여 저항 온도 계수를 조절하였다. 화학기상증착법(CVD)에 의해 합성한 단일층 그래핀은 습식 전사 공정을 통해 원하는 기판에 전사되었다. PEI에 의한 계면 도핑을 유도하기 위하여, 소수성의 그래핀 표면을 산소 플라즈마 처리를 통해 결함을 최소화하면서 친수성으로 제어하였다. PEI 도핑 효과를 전계효과트랜지스터를 이용하여 확인하였다. PEI 도핑에 의해서 CVD 그래핀의 저항 온도 계수(TCR) 값이 30~50℃의 온도 범위에서 -0.49±0.03%/K로 향상된 것을 확인하였다.

Abstract

There has been increasing demand for real-time monitoring of body and ambient temperatures using wearable devices. Graphene-based thermistors have been developed for high-performance flexible temperature sensors. In this study, the temperature coefficient of resistance (TCR) of monolayer graphene was controlled by coating polyethylenimine (PEI) on graphene surfaces to enhance its temperature-sensing performances. Monolayer graphene grown by chemical vapor deposition (CVD) was wet-transferred onto a target substrate. To facilitate the interfacial doping by PEI, the hydrophobic graphene surface was altered to be hydrophilic by oxygen plasma treatments while minimizing defect generation. The effect of PEI doping on graphene was confirmed using a back-gated field-effect transistor (FET). The CVD-grown monolayer graphene coated with PEI exhibited an improved TCR of -0.49 ± 0.03 %/K in a temperature range of 30~50 ℃.

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