CVD공정으로 제작된 멀티레이어 그래핀의 압저항 효과를 이용한직접화된 압력센서 개발
Development of Integration Pressure Sensor Using Piezoresistive Effect of Chemical Vapor Deposition (CVD) Produced Multilayer Graphene
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초록
In this study, a diaphragm-type pressure sensor was developed using multi-layer(four-layer) graphene produced at 1 nm thickness bythermally transferring single-layer graphene produced by chemical vapor deposition (CVD) to a 6" silicon wafer. By measuring thegauge factor, we investigated whether it was possible to produce a pressure sensor of consistent quality. As a result of the measurement,the pressure sensor using multilayer graphene showed linearity and had a gauge factor of about 17.5. The gauge factor of the multilayergraphene-based pressure sensor produced through this study is lower than that of doped silicon, but is more sensitive than a generalmetal sensor, showing that it can be sufficiently used as a commercialized sensor.
Abstract
In this study, a diaphragm-type pressure sensor was developed using multi-layer(four-layer) graphene produced at 1 nm thickness bythermally transferring single-layer graphene produced by chemical vapor deposition (CVD) to a 6" silicon wafer. By measuring thegauge factor, we investigated whether it was possible to produce a pressure sensor of consistent quality. As a result of the measurement,the pressure sensor using multilayer graphene showed linearity and had a gauge factor of about 17.5. The gauge factor of the multilayergraphene-based pressure sensor produced through this study is lower than that of doped silicon, but is more sensitive than a generalmetal sensor, showing that it can be sufficiently used as a commercialized sensor.
참고문헌 (13)
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