NbC 코팅된 도가니를 사용한 고품질의 SiC 단결정 성장
High quality SiC single crystal growth by using NbC-coated crucible
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참고문헌
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초록
본 연구에서는 NbC 코팅된 도가니가 SiC 단결정 품질에 미치는 영향을 조사하였다. 실험은 흑연 도가니와NbC 코팅된 도가니를 사용하였으며, 두 실험의 결과를 체계적으로 비교 분석하였다. SiC 결정 성장은 Ar 분위기에서2300°C 이상의 온도와 5 Torr의 압력조건에서 PVT 법을 사용하여 진행하였다. 성장된 SiC 결정은 양면 그라인딩과 연마 가공 후 Raman 분석을 통해 결정상 분석, HR-XRD 분석으로 결정성을 분석하였다. 또한 KOH 에칭 후 광학현미경 분석과SIMS 분석으로 결함 밀도 및 불순물 농도를 분석하여 두 웨이퍼의 품질을 비교하였다.
Abstract
This study was focused to investigate the effect of NbC-coated crucible on the quality of the SiC crystals. Then,the different properties between SiC crystals grown in a conventional graphite crucible and NbC-coated crucible were systematically compared. SiC crystals were grown using the Physical Vapor Transport (PVT) method at a temperature of 2300°C and a pressure of 5 Torr in Ar atmosphere. After grinding and polishing, the polytype of the grown SiC crystal was analyzed using Raman spectroscopy, and crystallinity was confirmed by HR-XRD. Furthermore, the defect density and the concentration of impurities were analyzed by an optical microscope and a SIMS, respectively.
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