PVT 방법에 의한 링 모양의 SiC 단결정 성장
Growth of ring-shaped SiC single crystal via physical vapor transport method
0
조회
0
다운로드
1
인용
0
참고문헌
키워드
초록
본 연구에서는 PVT(Physical Vapor Transport) 방법을 이용하여 반도체 식각 공정용 소재로 사용되는 링 모양의SiC(Silicon carbide) 단결정을 제조하였다. 흑연 도가니 내부에 원기둥 형태의 흑연 구조물을 배치하여 PVT법에 의한 링 모양의 SiC 단결정을 성장시켰다. 단결정 기판을 시드로 사용하여 성장한 경우 크랙이 없는 우수한 특성의 포커스링을 얻을수 있었다. 단결정 포커스링과 CVD 포커스링의 에칭 특성을 살펴본 결과 단결정 포커스링의 에칭속도가 줄어들었고, 단결정 포커스링이 우수한 내플라즈마성을 보여준다고 할 수 있다.
Abstract
In this research, a ring-shaped silicon carbide (SiC) single crystal manufactured using the PVT (Physical VaporTransport) method was proposed to be applied to a SiC focus ring in semiconductor etching equipment. A cylindricalgraphite structure was placed inside the graphite crucible to grow a ring-shaped SiC single crystal by the PVT method. SiCsingle crystal ring without crack was successfully obtained in case of using SiC single crystal wafer as a seed. A plasmaetching process was performed to compare plasma resistance between the CVD-SiC focus ring and the PVT-SiC focus ring. The etch rate of ring materials in PVT-single crystal SiC focus ring was definitely lower than that of CVD-SiC focus ring,indicating better plasma resistance of PVT-SiC focus ring.
참고문헌 (10)
- T. Panagopoulus, "Three-dimensional simulation of an inductively coupled plasma reactor", J. Appl. Phys, 91, pp.2687~ (2002)
- T. Matsumoto, "“Recycling SiC focus ring for reactive ion etching equipment by insertless diffusion bonding using hot isotatic pressing", ECS J. Solid State Sci. Technol, 9, pp.124006~ (2020)
- T. Goto, "Corrosion resistance of sintered SiC against fluorinated plasmas", J. Vac. Sci. Technol. A, 36, pp.0614014~ (2018)
- E. Hammond, "Plasma and flow modeling of photomask etch chambers", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology (2003)
- J.S. Goela, M. A. Pickering, "Chemical vapor deposited SiC for high heat flux applications", Proc. SPIE Int. Soc. Opt. Eng, 2855, pp.2~ (1996)
- J.I. Kim, "Application of CVD SiC materials", The Korean Ceramic Society, 19, pp.14~ (2016)
- Y.M. Lu, "Microstructural study of residual stress in chemically vapor deposited β-SiC", Surf. Coat. Tech, 124, pp.262~ (2000)
- 박진용, "PVT 방법에 의한 링 모양의 SiC 다결정 성장", 한국결정성장학회지, 30(5), pp.163~167 (2020), 한국결정성장학회[DOI]
- J.Y. Yoon, "Ultraviolet fluorescence test for analyzing polytype of SiC crystal", The Korean Reliability Society, pp.145~ (2015)
- P.J. Wellmann, "Determination of doping levels and their distribution in SiC by optical techniques", Mater. Sci. Eng. B, 102, pp.262~ (2003)