원뿔 형태의 patterned sapphire substrate 위에 성장한 α-Ga2O3의 특성분석
Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy
0
조회
0
다운로드
3
인용
0
참고문헌
키워드
초록
본 연구에서는 halide vapor phase epitaxy 성장법을 이용하여 원뿔 형태의 패턴이 주기적으로 형성된 patterned sapphire substrate(PSS) 위에 α-Ga2O3를 성장하고 그 특성에 변화에 대해 분석하였다. PSS의 패턴의 유무에 따른 영향을 알 아보기 위해 c-plane 사파이어 기판과 원뿔의 크기가 다른 두 개의 PSS 위에 α-Ga2O3를 성장하여 비교 분석하였다. 또한PSS 위에 성장된 α-Ga2O3 의 성장과정을 알아보기 위해 점차 성장 시간을 증가해가며 관찰하였고 성장 온도를 470-550 o C까 지 변화해가며 성장하였다. 이를 통해 원뿔 형태의 패턴이 형성된 PSS 위에서의 최적 성장 조건과 그 성장 mechanism에 대해 분석이 가능하였고 그 결과로 성장과정에서 발생하는 수평 성장에 의해 α-Ga2O3의 비대칭면인 (10-14) 반치폭 값을크게 감소시킬 수 있었다.
Abstract
In this study, we demonstrated a characterization of α-Ga2O3 grown on a cone-shape patterned sapphire substrate by using the halide vapor phase epitaxy. An α-Ga2O3 was grown on different size of PSS and c-plane sapphire substrate for comparison to confirm the effect of PSS. In addition, growth time of α-Ga2O3 was gradually increased to confirm growth mechanism of α-Ga2O3 grown on the PSS. A growth temperature was changed to 470-550°C. It can be analyzed growth conditions and mechanisms on the cone-shape PSS, resulting in a significant decrease in the FWHM value of an asymmetric plane (10-14) of α-Ga2O3 , due to lateral growth that occurs during the growth process.
참고문헌 (16)
- M. Higashiwaki, "Current status of Ga2O3 power devices", Jpn. J. Appl. Phys, 55, pp.1202~ (2016)
- Z. Hu, "Enhancement-mode Ga2O3 vertical transistor with breakdown voltage > 1 kV", IEEE Electron Device Lett, 39, pp.869~ (2018)
- S.J. Pearton, "Perspective:Ga2O3 for ultra-high power rectifiers and MOSFETS", J. Appl. Phys, 124, pp.220901~ (2018)
- D.Y. Guo, "Epitaxial growth and solar-blind photoelectric properties of corundum-structured α-Ga2O3 thin films", Mater. Lett, 164, pp.364~ (2016)
- D.Y. Guo, "Fabrication of β-Ga2O3 thin films and solar-blind photodetector by laser MBE technology", Opt. Mater. Express, 4, pp.1067~ (2014)
- C. Jin, "Ultrasensitive multiple networked Ga2O3-core", ZnO-shell nanorod gas sensors, 2012, pp.161, 223~
- K. Sasaki, "Device-quality β-Ga2O3epitaxial films fabricated by ozone molecular beam epitaxy", Appl. Phys. Express, 5, pp.035502~ (2012)
- M. Higashiwaki, "Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics", Appl. Phys. Lett, 103, pp.123511~ (2013)
- K. Kaneko, "Evaluation of misfit in alpha-Ga2O3 epitaxial growth on alpha-Al2O3 substrate", Jpn. J. Appl. Phys, 51, pp.020201~ (2012)
- K. Kaneko, "Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe)2O3", J. Appl. Phys, 113, pp.233901~ (2013)
- K. Akaiwa, "Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrate", Jpn. J. Appl. Phys, 55, pp.1202~ (2016)
- Y. Oshima, "Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrate", Appl. Phys. Express, 8, pp.055501~ (2015)
- Dong-Hun Kang, "Growth and Evaluation of GaN Grown on Patterned Sapphire Substrates", Journal of the Korean Physical Society, 52(6), pp.1895~1899 (2008), 한국물리학회
- H. K. Son, "Optimization of the growth temperature of α-Ga2O3 epilayers grown by halide vapor phase epitaxy", J. Alloys Compd, 773, pp.631~ (2019)
- H.K. Son, "Influence of post-annealing on properties of α-Ga2O3 epilayer grown by halide vapor phase epitaxy", ECS J. Solid State Sci. Technol, 7, pp.Q1~ (2019)
- Y. Chen, "A study of GaN nucleation and coalescence in the initial growth stage on nanoscale patterned sapphire substrate via MOCVD", Cryst. Eng. Comm, 20, pp.6811~ (2018)