MBE 법에 의해 성장된 고종횡비 InGaN 나노와이어 광촉매
High aspect-ratio InGaN nanowire photocatalyst grown by molecular beam epitaxy
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초록
우리는 분자선 에피택시(Molecular Beam Epitaxy) 법을 사용하여 광전기화학적 물분해 수소생산용 고종횡비 GaN 기반 나노와이어를 Si 기판 위에 성공적으로 제작하였다. 주사전자현미경(SEM)과 에너지분산형 분광법(EDX)은 pGaN:Mg 및 p-InGaN 나노와이어가 고밀도와 함께 수직으로 성장 되었음을 증명하였다. 또한, p-InGaN 나노와이어의 발광 파장을 552 nm에서 590 nm까지의 조절이 가능하다는 것을 확인하였다. 이렇게 제작된 p-InGaN 나노와이어는 태양광을 통 해 외부 전위 없이 물분해가 가능한 수소생산용 광촉매로써 매우 유용하게 사용될 수 있다.
Abstract
We have successfully fabricated high aspect-ratio GaN-based nanowires on Si substrates using molecular beam epitaxy (MBE) system for high-efficiency hydrogen generation of photoelectrochemical water splitting. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) demonstrated that p-GaN:Mg and p-InGaN nanowires were grown vertically on the substrate with high density. Furthermore, it was also confirmed that the emission wavelength of p-InGaN nanowire can be adjusted from 552 nm to 590 nm. Such high-aspect ratio p-InGaN nanowire structure will be a solid foundation for the realization of ultrahigh-efficiency photoelectrochemical water splitting through sunlight.
참고문헌 (20)
- M.D. Doherty, "Toward more efficient photochemical CO2 reduction", Coord. Chem. Rev, 254, pp.2472~ (2010)
- Y. Amao, "Solar fuel production based on the artificial photosynthesis system", ChemCatChem, 3, pp.458~ (2011)
- S.Y. Reece, "Wireless solar water splitting using silicon-based semiconductors and earth-abundant catalysts", Science, 334, pp.645~ (2011)
- A.E. Romanov, "Strain-induced polarization in wurtzite III-nitride semipolar layers", J. Appl. Phys, 100, pp.023522~ (2006)
- K. Kishino, "Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns", Nanotechnology, 26, pp.225602~ (2015)
- S. Kang, "Ultraviolet-C photodetector fabricated using Si-doped n-AlGaN nanorods grown by MOCVD", ACS Photonics, 4, pp.2595~ (2017)
- H.P. Nguyen, "Controlling electron overflow in phosphor-free InGaN", GaN nanowire white light-emitting diodes, 2012, pp.12, 1317~
- H.P. Nguyen, "p-Type modulation doped InGaN", GaN dot-in-a-wire white-lightemitting diodes monolithically grown on Si(111), 2011, pp.11, 1919~
- Y.-H. Ra, "Highly uniform characteristics of GaN nanorods grown on Si(111) by metalorganic chemical vapor deposition", Jpn. J. Appl. Phys, 49, pp.091003~ (2010)
- Y. -H. Ra, "Scalable nanowire photonic crystals: molding the light emission of InGaN", Adv. Funct. Mater, 27, pp.1702364~ (2017)
- H. P. Nguyen, "Engineering the carrier dynamics of InGaN nanowire white light-emitting diodes by distributed p-AlGaN electron blocking layers", Sci. Rep, 5, pp.7744~ (2015)
- Y. H. Ra, "High-quality uniaxial InxGa1−xN", GaN multiple quantum well nanowires on Si(111) grown by metal-organic chemical vapor deposition and light-emitting diode fabrication, 2013, pp.5, 2111~
- L. Rigutti, "Correlation of optical and structural properties of GaN", AlN core-shell nanowires, 2011, pp.83, 155320~
- S. M. Sadaf, "Alternating-current InGaN", GaN tunnel junction nanowire white-light emitting diodes, 2015, pp.15, 6696~
- K. Kishino, "Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns", Nanotechnology, 26, pp.225602~ (2015)
- R. Wang, "High efficiency, full-color AlInGaN quaternary nanowire light emitting diodes with spontaneous core-shell structures on Si", Appl. Phys. Lett, 106, pp.261104~ (2015)
- S. M. Sadaf, "Monolithically integrated metal", semiconductor tunnel junction nanowire light-emitting diodes, 2016, pp.16, 1076~
- Y. H. Ra, "Full-color single nanowire pixels for projection displays", Nano Lett, 16, pp.4608~ (2016)
- H. P. Nguyen, "Breaking the carrier injection bottleneck of phosphor-free nanowire white lightemitting diodes", Nano Lett, 13, pp.5437~ (2013)
- Y. H. Ra, "Ultraviolet light-emitting diode using nonpolar AlGaN core-shell nanowire heterostructures", Adv. Optical Mater, 6, pp.1701391~ (2018)