상보형 신호경로 방식의 CMOS 이미지센서 픽셀 모델링 및 HSPICE 해석
Modeling and HSPICE analysis of the CMOS image sensor pixel with the complementary signal path
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In this paper, a circuit analysis of the complementary CMOS active pixel and readout circuit is caried out.PMOS, several NMOSs and PMOSs sets for complementary signals. Photo diode is modeled with Medici device program.HSPICE was used to analyze the variation of the signal feature depending on light intensity using 0.5m standard CMOSprocess. Simulation results show that the output signal range is from 0.8 V to 4.5 V. This signal range increased 135 %output dynamic range compared to conventional 3TR pixel in the condition of 5 V power supply.
Abstract
In this paper, a circuit analysis of the complementary CMOS active pixel and readout circuit is caried out.PMOS, several NMOSs and PMOSs sets for complementary signals. Photo diode is modeled with Medici device program.HSPICE was used to analyze the variation of the signal feature depending on light intensity using 0.5m standard CMOSprocess. Simulation results show that the output signal range is from 0.8 V to 4.5 V. This signal range increased 135 %output dynamic range compared to conventional 3TR pixel in the condition of 5 V power supply.
참고문헌 (9)
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