상보형 신호경로 방식의 CMOS 이미지 센서 픽셀의 하드웨어 구현
Hardware implementation of a CMOS image sensor pixel using complemental signal path
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초록
In this paper, an analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure consists of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Proposed CMOS image sensors pixel has been fabricated using 0.5 standard CMOS process. Measured results show that the output signal range is from 0.8 V to 3.8 V. This output signal range increased 125 % compared to conventional 3TR pixel in the condition of 5 V power supply.
Abstract
In this paper, an analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure consists of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Proposed CMOS image sensors pixel has been fabricated using 0.5 standard CMOS process. Measured results show that the output signal range is from 0.8 V to 3.8 V. This output signal range increased 125 % compared to conventional 3TR pixel in the condition of 5 V power supply.
참고문헌 (10)
- E. R. Fossum, "CMOS image sensors, electronic camera on a chip", pp.17~25 (1995), IDEM Tech. Dig.
- H. S. Wong, "CMOS image sensors-recent advantage and device scailing considerations", pp.201~204 (1997), IDEM Tech. Dig.
- C. Xu, "A low voltage hybrid bulk", SOI CMOS active pixel image sensor, 2001, pp.22, 248~250
- Peter Alan Levine, "Extended dynamic range image sensor system, US. Patent 6,040,570", ~ (2000)
- B.S. Carlson, "Comparison of modern CCD and CMOS image sensor technologies and system for low resolution imaging", Sensors. Proceedings of IEEE, 1, pp.171~176 (2002)
- Silvano Dontani, "Photodetectors : Devices, Circuit, and Applications" (2000), Prentice Hall PTR
- B. Ackland, "Camera on a chip", Solid-State Circuit Conference, 1996. Digest of Technical Papers. 43 rd ISSCC., pp.8~10 (1996), IEEE International
- Chen Xu, "A 1.0-V VDD CMOS active-pixel sensor with complementary pixel architecture and pulsewidth modulation fabricated With a 0.25-um CMOS process", IEEE J. Solid-State Circuits, 37(12) (2002)
- 신영식, "고감도 이미지 센서용 실리콘 나노와이어 MOSFET 광 검출기의 제작", 센서학회지, 15(1), pp.1~6 (2006), 한국센서학회
- 김진수, "상보형 신호경로 방식의 CMOS 이미지센서 픽셀 모델링 및 HSPICE 해석", 센서학회지, 17(1), pp.41~52 (2008), 한국센서학회