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Charge Pump 회로를 이용한 능동 픽셀 센서의 동작 범위 개선

Dynamic range improvement of active pixel sensor using charge pump circuit

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초록

Wide dynamic range active pixel sensor(APS) using a charge pump circuit has been designed by using 2-poly 4-metal0.35m standard CMOS technology. The structure of the proposed APS is similar to the structure of the conventionaldynamic range of the proposed APS is increased, compared to the conventional 3-Tr APS.

Abstract

Wide dynamic range active pixel sensor(APS) using a charge pump circuit has been designed by using 2-poly 4-metal0.35m standard CMOS technology. The structure of the proposed APS is similar to the structure of the conventionaldynamic range of the proposed APS is increased, compared to the conventional 3-Tr APS.

참고문헌 (7)

  1. M. Bigas, "Review of CMOS image sensors", Microelectronics, 37, pp.433~451 (2006)
  2. S. H. Seo, "Characteristics of a PMOSFET photodetector for highly-sensitive active pixel sensor", J. Kor. Sensors Soc, 12(4), pp.149~155 (2003)
  3. H-J Yoon, "A CMOS active pixel sensor with embedded electronic shutter and A", D converter, 2005, pp.14(4), 272~277
  4. J. S. Brugler, "Charge pumping in MOS devices", IEEE Trans. Elect. Dev, ED- 16(3), pp.297~302 (1969)
  5. V. Prabhakar, "LDD charge pumping - direct measurementof interface states in the overlap region", pp.45~48 (1995), IEDM
  6. J. F. Dickson, "On-chip high-voltage generation in NMOS integrated circuits using an improved voltage multiplier technique", IEEE J. Solid-State Circuits, SC-11, pp.374~378 (1976)
  7. Y-Y Chai, "Design of charge pump circuit for analog memory with single poly structure in sensor processing using neural networks", J. Kor. Sensors Soc, 12(1), pp.51~56 (2003)

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