Ar/N2 유량비가 중간주파수 마그네트론 스퍼터로 증착된 γ-Mo2N 박막의 미세구조, 기계적 및 전기적 특성에 미치는 영향

Abstract

Molybdenum nitride (γ-Mo2N) thin films were deposited on silicon (100) substrates using mid-frequency magnetron sputtering (MfMS), at selected Ar:N2 flow rates (10:1, 5:1 and 2:1 sccm). The effect of Ar:N2 flow rate on the microstructure, mechanical and electrical properties of the γ-Mo2N thin films were investigated using FESEM, XRD, AFM, nanoindentation tester, and semiconductor characterization system It was confirmed by XRD analysis that the thin films were produced is γ-Mo2N with face-centered cubic crystal structure. As the flow rate of Ar:N2 decreased down to 5:1 sccm, the growth rate of thin film thickness reduced from 1.24 μm/h to 1.13 μm/h while the crystallite size of γ-Mo2N thin film decreased from 15.2 nm to 10.1 nm. Consequently, the surface roughness of thin film was reduced from 3.2 nm to 2.7 nm. In addition, the γ-Mo2N thin films deposited at the Ar:N2 flow rate studied, at 5:1 sccm; are having the lowest resistivity (324 μΩcm) and the largest nano hardness (25.4 GPa). The results articulate that Ar:N2 flow rate was one of the important process parameters in mid-frequency magnetron sputtering that could affect the morphology, mechanical and electrical properties of γ-Mo2N thin films.