개선된 온-저항 및 홀딩 전압을 갖는 저전압급 ESD 보호소자에 관한 연구
Study on Low-Voltage ESD Protection Device with Improved On-Resistance and Holding Voltage
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초록
본 논문은 기존 저전압 ESD 보호소자와 비교하여 더 나은 홀딩 전압을 가지고 전류구동 능력을 향상시킨 ESD 보호소자를 제안한다. 제안하는 구조는 SCR 기반의 보호소자이며 P-웰 영역과 N+, P+ 플로팅 영역을 추가하였다. 그 결과 제안된 ESD 보호소자는 내부 기생 BJT의 전류 이득을 변화시켜 기존의 ESD 보호소자와 비교하여 높은 홀딩 전압을 갖는 것을 검증하였다. 따라서 본소자는 3.3V 어플리케이션에 충분한 래치업 면역 특성을 보유할 것으로 기대된다.
Abstract
This paper proposes an ESD protection device that offers improved holding voltage and enhanced currentdriving capability compared to conventional low-voltage ESD protection devices. The proposed structure is basedon an SCR device with additional P-well regions and N+, P+ floating regions. As a result, it was verified that theproposed ESD protection device achieves a higher holding voltage by altering the current gain of the internalparasitic BJTs compared to existing ESD protection devices. Therefore, this device is expected to exhibit sufficientlatch-up immunity for 3.3V applications.
참고문헌 (6)
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