저전압급 ESD 보호를 위한 LRSCR 기반 Self-bias SCR에 관한 연구
A Study on Self-bias SCR Based on LRSCR for Low Voltage Class ESD Protection
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초록
본 논문에서는 기존의 ESD 보호소자보다 Self-bias를 통하여 전류구동 능력을 향상시킨 ESD 보호소자를 제안하였다. 새로운 제안 구조는 LRSCR구조 기반이며 N+ 확산 영역을 추가하였으며 게이트와 P+ 확산영역을 연결하여 저항을 감소시킨다. 그 결과, 제안된 ESD 보호소자는 11.8V의 트리거 전압과 5.9V의 홀딩 전압을 나타내는 것으로 확인되었다. 저전압용 5V 애플리케이션에 사용될 수 있으며 우수한 전류구동능력을 가지고있을 것으로 기대된다.
Abstract
This paper proposed an ESD protection device that improved the current driving ability through Self-bias thanthe existing ESD protection device. The new proposed structure is based on the LRSCR structure and adds an N+diffusion region, and reduces resistance by connecting the gate and the P+ diffusion region. As a result, it wasconfirmed that the proposed ESD protection device exhibits a trigger voltage of 11.8V and a holding voltage of5.9V. It can be used in 5V applications for low voltage and is expected to have excellent current driving capability
참고문헌 (6)
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