Series Connected-NPN 및 N-Stack기술 적용을통하여 높은 홀딩전압특성을 갖는 새로운 구조의SCR에 관한 연구
A Study on SCR of New Structure with High Holding Voltage Characteristics by Applying Series Connected-NPN and N-Stack Technology
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초록
본 논문에서는 대표적인 ESD 보호소자인 LVTSCR의 특성을 향상시킨 새로운 구조의 ESD소자를 제안하고 특정application의 각 요구전압에 최적화된 설계를 위한 N-stack 기술에 대하여 검증한다. 주요 파라미터인 홀딩전압과 트리거전압에 대하여 특성을 파악하고 감내특성의 지표인 온도특성 또한 검증한다. well영역의 추가구성과 기생 npn BJT를 추가로직렬 연결된 구조를 형성하여 보다 향상된 전기적 특성을 갖는다. 특성 검증을 위해 synopsys 사의 T-cad simulation tool을이용하였다.
Abstract
In this paper, we propose a novel ESD device with improved characteristics of LVTSCR, which is a representativeESD protection device, and verify the N-stack technology for design optimized for each required voltage of a specificapplication. The characteristics of the holding voltage and the trigger voltage, which are the main parameters, areexamined and the temperature characteristic, which is an indicator of the tolerance characteristic, is also verified. wellregion and a parasitic NPN to form a series-connected structure. We used synopsys' T-cad simulation tool forcharacterization.
참고문헌 (5)
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