향상된 전기적 특성을 지닌 LVTSCR 기반의 N-Stack ESD 보호소자에 관한 연구
A Study on LVTSCR-Based N-Stack ESD Protection Device with Improved Electrical Characteristics
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초록
본 논문에서는 일반적인 ESD 보호소자인 LVTSCR의 구조적 변경을 통해 향상된 전기적 특성을 달성한 새로운 구조의ESD 보호소자를 제안한다. 또한 요구되는 전압 Application에 따른 ESD Design Window에 최적화된 설계를 위하여N-Stack 기술을 적용한다. 기존의 LVTSCR 구조에 추가로 삽입된 N-Well 영역은 Anode와 전기적으로 연결함으로써 추가적인 ESD 방전경로를 제공하고 이는 온-저항 및 온도 특성을 향상시킨다. 또한 짧은 Trigger 경로는 기존의 LVTSCR보다더 낮은 Trigger Voltage 가지므로 우수한 Snapback 특성을 지닌다. 그리고 제안된 ESD 보호소자의 전기적 특성을 검증하기 위해 Synopsys 사의 T-CAD Simulator을 이용하였다.
Abstract
In this paper, we propose a new structure of ESD protection device that achieves improved electrical characteristicsthrough structural change of LVTSCR, which is a general ESD protection device. In addition, it applies N-Stacktechnology for optimized design in the ESD Design Window according to the required voltage application. The N-Wellarea additionally inserted in the existing LVTSCR structure provides an additional ESD discharge path by electricallyconnecting to the anode, which improves on-resistance and temperature characteristics. In addition, the short trigger pathhas a lower trigger voltage than the existing LVTSCR, so it has excellent snapback characteristics. In addition,Synopsys’ T-CAD Simulator was used to verify the electrical characteristics of the proposed ESD protection device.
참고문헌 (6)
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