Formation of anti-reflection films and p-n junction by sol-gel process for one step process
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This study examined a method to form simultaneously SiO2/SiN anti-reflection coating (ARC) films and p-n junction using a sol-gel method and heat treatment under nitridation environment for multi-crystalline silicon solar cells. Three processes such as p-n junction formation, ARC could be reduced into one step process. Chemical analysis of films after a nitridation treatment indicated a high Si-O and Si-N peak intensity. The SiO2/SiN films made from nitridation treatment at 1000 o C showed 13% reflectance at 550 nm. Also, the formation of a p-n junction was confirmed by I-V test.
Abstract
This study examined a method to form simultaneously SiO2/SiN anti-reflection coating (ARC) films and p-n junction using a sol-gel method and heat treatment under nitridation environment for multi-crystalline silicon solar cells. Three processes such as p-n junction formation, ARC could be reduced into one step process. Chemical analysis of films after a nitridation treatment indicated a high Si-O and Si-N peak intensity. The SiO2/SiN films made from nitridation treatment at 1000 o C showed 13% reflectance at 550 nm. Also, the formation of a p-n junction was confirmed by I-V test.
참고문헌 (18)
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