단결정 실리콘 태양전지의 도핑 최적화를 위한 확산 온도에 대한 연구
Optimization of Drive-in Temperature at Doping Process for Mono Crystalline Silicon Solar Cell
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In this paper, the optimized doping condition of crystalline silicon solar cells with 156 × 156 mm2 area was studied. To optimize the drive-in temperature in the doping process, the other conditions except variable drive-in temperature were fixed. These conditions were obtained in previous studies. After etching 7 μm of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75∼80 nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-850 °C five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of 830 °C to 890 °C to obtain the sheet resistance 30∼70 Ω/□ with 10 Ω/□ intervals. Solar cell made in 890 °C as the drive-in temperature revealed 17.1 % conversion efficiency which is best in this study. This solar cells showed 34.4 mA/cm2 of the current density, 627 mV of the open circuit voltage and 79.3 % of the fill factor.
Abstract
In this paper, the optimized doping condition of crystalline silicon solar cells with 156 × 156 mm2 area was studied. To optimize the drive-in temperature in the doping process, the other conditions except variable drive-in temperature were fixed. These conditions were obtained in previous studies. After etching 7 μm of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75∼80 nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-850 °C five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of 830 °C to 890 °C to obtain the sheet resistance 30∼70 Ω/□ with 10 Ω/□ intervals. Solar cell made in 890 °C as the drive-in temperature revealed 17.1 % conversion efficiency which is best in this study. This solar cells showed 34.4 mA/cm2 of the current density, 627 mV of the open circuit voltage and 79.3 % of the fill factor.
참고문헌 (8)
- 이수홍, "실리콘 태양전지", 고분자 과학과 기술지, 17(4), pp.400~406 (2006)
- MartinA.Green, "Wenham,High-efficiency Silicon Solar Cells", IEEE Transactions on Electron Devices, 31(5), pp.679~683 (1984)
- 이재형, "태양전지 원론", pp.368~369 (2005), 홍릉과학출판사
- DominikM, "RapidThermalFiringofScreenPrinted ContactsforLargeAreaCrystallineSilicon SolarCells", The28thIEEE Photovoltaic SpecialistsConference, pp.379~382 (2000)
- 이준신, "태양전지 공학", pp.128~134 (2007), 도서출판그린
- DK Schroder, "SolarCellContact Resistance", IEEETransactionsonElectron Devices, 31(5) (1984)
- DH Neuhaus, "Industrial Silicon WaferSolarCells", Advancesin Optoelectronics, pp.1~15 (2007)
- ALuque, "Handbookofphotovoltaic scienceandengineering", pp.92~98 (2003), JohnWileyand Sons