The effect of heat treatment parameters on the emitter formation of the n-type silicon solar cell
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Employing screen printing technology, aluminum is applied to the back side of the n-type silicon wafer to see the effect of the heat treatment parameters on the Voc of the solar cell. Heat treatment at 850℃ produces the highest Voc among various heat treatment conditions. Heat treatment at the temperatures higher than 850℃ results in lower Voc, which is due to the destruction of the Al-Si alloy emitter layer. The destruction of Al-Si layer observed to be caused by the vigorous movement of silicon atoms toward aluminum layer during the heat treatment.
Abstract
Employing screen printing technology, aluminum is applied to the back side of the n-type silicon wafer to see the effect of the heat treatment parameters on the Voc of the solar cell. Heat treatment at 850℃ produces the highest Voc among various heat treatment conditions. Heat treatment at the temperatures higher than 850℃ results in lower Voc, which is due to the destruction of the Al-Si alloy emitter layer. The destruction of Al-Si layer observed to be caused by the vigorous movement of silicon atoms toward aluminum layer during the heat treatment.
참고문헌 (6)
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- J.W. Mayer, "Electronic Materials Science : For Integrated Circuits in Si and GaAs", pp.283~ (1988)