Optical Properties of a Sputter-Deposited ZnS Buffer Layer for the Application of CIGS Solar Cell
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Optical properties of sputter-deposited ZnS thin films were investigated as potential replacements for CBD- deposited CdS buffer layers in the application of CIGS solar cells. ZnS thin films were fabricated using an RF magnetron sputtering system. We varied the RF power between 30, 50, 75, and 100 W and altered the deposition time between 5, 10, 20, and 40 minutes. The deposited thin film had a zinc blende structure, and the average transmittance of the thin film was greater than 69% within 400-800 nm. When the thickness of the thin film was increased, the red shift phenomenon was enhanced. Band gap energy of the ZnS thin film tended to decrease as the thickness increased.
Abstract
Optical properties of sputter-deposited ZnS thin films were investigated as potential replacements for CBD- deposited CdS buffer layers in the application of CIGS solar cells. ZnS thin films were fabricated using an RF magnetron sputtering system. We varied the RF power between 30, 50, 75, and 100 W and altered the deposition time between 5, 10, 20, and 40 minutes. The deposited thin film had a zinc blende structure, and the average transmittance of the thin film was greater than 69% within 400-800 nm. When the thickness of the thin film was increased, the red shift phenomenon was enhanced. Band gap energy of the ZnS thin film tended to decrease as the thickness increased.
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