유연 및 AVR 디스플레이 광원을 위한 나노 어레이 구조 개발

Abstract

The nano-sized structures were fabricated by forming patterned nano-molds different from the conventional nano-structure fabrication methods. In order to form a nano-mold structure, a silicon oxide layer was applied and a reactive etching process was used in a semiconductor process. It is possible to create a nanorod structure capable of controlling the pitch size with a nano-mold formed through pattern formation and etching processes. In the conventional two-dimensional planar structure, nitride grows in the c-crystal plane (0001). Therefore, electrons and holes are spatially separated due to a polarization effect, thereby preventing effective recombination. On the other hand, when the light emitting layer is grown on the side of the nanorod, the nonpolar nitride can be grown on the m-crystal plane (10-10) rather than on the c-crystal plane. The formation of the light emitting layer based on the nonpolar nitride can suppress the polarization effect generated in the nitride of the polarity, and thus it is expected that the recombination of electrons and holes can be strengthened.