이황화몰리브덴(MoS₂) 기반 전계효과트랜지스터(FET)의 진공 및 대기 상태에서의 전기적 특성 비교 연구
Comparison Study of Electrical Characteristics of Molybdenum Disulfide (MoS₂) Based Field Effect Transistors (FETs) in Vacuum and Atmospheric Conditions
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Abstract : Molybdenum disulfide (MoS₂), a two-dimensional (2D) material with excellent electronic and optical properties, is a promising candidate for next-generation semiconductor applications. This study investigates the electrical characteristics of MoS₂ field-effect transistors (FETs) with a thickness of approximately 200nm and approximately 70nm under ambient and vacuum conditions. MoS₂ samples were fabricated using mechanical exfoliation via PDMS transfer and characterized using atomic force microscopy (AFM) and Raman spectroscopy. Electrical measurements, including I-V, Vds-Id, and Vg-Id characteristics, were conducted using a semiconductor parameter analyzer. The results indicate that both MoS₂ samples with a thickness of approximately 200nm and approximately 70nm exhibit minimal variation in electrical characteristics between ambient and vacuum conditions. While a slight increase in current was observed under vacuum, the difference remained below 5%. These findings suggest that MoS₂ devices are relatively insensitive to environmental impurities such as oxygen and moisture, making them suitable for applications requiring stable performance regardless of environmental changes. Future research should focus on long-term electrical stability and performance optimization under varying temperature and pressure conditions.
Abstract
Abstract : Molybdenum disulfide (MoS₂), a two-dimensional (2D) material with excellent electronic and optical properties, is a promising candidate for next-generation semiconductor applications. This study investigates the electrical characteristics of MoS₂ field-effect transistors (FETs) with a thickness of approximately 200nm and approximately 70nm under ambient and vacuum conditions. MoS₂ samples were fabricated using mechanical exfoliation via PDMS transfer and characterized using atomic force microscopy (AFM) and Raman spectroscopy. Electrical measurements, including I-V, Vds-Id, and Vg-Id characteristics, were conducted using a semiconductor parameter analyzer. The results indicate that both MoS₂ samples with a thickness of approximately 200nm and approximately 70nm exhibit minimal variation in electrical characteristics between ambient and vacuum conditions. While a slight increase in current was observed under vacuum, the difference remained below 5%. These findings suggest that MoS₂ devices are relatively insensitive to environmental impurities such as oxygen and moisture, making them suitable for applications requiring stable performance regardless of environmental changes. Future research should focus on long-term electrical stability and performance optimization under varying temperature and pressure conditions.