열처리공정에 따른 층상 ReSe2 디바이스의 접촉 저항 개선 연구
A Study on the Contact Resistance Improvement in Layered ReSe2 Device by Annealing Process
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The two-dimensional(2D) materials, including graphene, h-BN, layered transition metal–chalcogenides (TMC) and layered transition metal-dichalcogenides(TMDCs) are the next generation of the opto-electronic devices. In this paper, we report on the opto-electronic properties of back-gated field effect transistor(FET) based on ∼ 200 layered ReSe2 at before and after annealing. After the annealing, the transition from schottky to ohmic contact in the Ti electrodes and ReSe2 was observed, and the external quantum efficiency (EQE) of the ReSe2 device was by increased 10% due to the improvement of the contact resistance between the electrodes and ReSe2. We obtained an EQE of 18.8% and 8.2% using 532 nm laser excitation, and ReSe2 device is a good candidate for 2D material based ultra-thin opto-electronic device applications.
Abstract
The two-dimensional(2D) materials, including graphene, h-BN, layered transition metal–chalcogenides (TMC) and layered transition metal-dichalcogenides(TMDCs) are the next generation of the opto-electronic devices. In this paper, we report on the opto-electronic properties of back-gated field effect transistor(FET) based on ∼ 200 layered ReSe2 at before and after annealing. After the annealing, the transition from schottky to ohmic contact in the Ti electrodes and ReSe2 was observed, and the external quantum efficiency (EQE) of the ReSe2 device was by increased 10% due to the improvement of the contact resistance between the electrodes and ReSe2. We obtained an EQE of 18.8% and 8.2% using 532 nm laser excitation, and ReSe2 device is a good candidate for 2D material based ultra-thin opto-electronic device applications.
참고문헌 (19)
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