화학기상증착법을 통해 합성된 그래핀 및 MoSe2를 이용한 반데르발스 수직이종접합 전계효과 트랜지스터

Abstract

Van der Waals heterostructures have garnered significant attention in recent research due to their excellent electronic characteristics arising from the absence of dangling bonds and the exclusive reliance on van der Waals forces for interlayer coupling. However, most studies have been confined to fundamental research employing the Scotch tape (mechanical exfoliation) method. We fabricated van der Waals vertical heterojunction transistors to advance this field using materials exclusively grown via chemical vapor deposition (CVD). CVD-grown graphene was patterned through photolithography to serve as electrodes, while CVD-grown MoSe2 was employed as the pickup/transfer material, resulting in the realization of van der Waals heterojunction transistors with interlayer charge transfer effects. The electrical characteristics of the fabricated devices were thoroughly examined. Additionally, we observed variations in the transistor’s performance based on the presence of defects in MoSe2 layer.