Synthesis and Characterization of a Pt/NiO/Pt Heterostructure for Resistance Random Access Memory
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We examined the electrical properties and microstructure of NiO produced using a solgel method and Ni nitrate hexahydrate (Ni[NO3]2·6H2O) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM)devices. It was found that as-prepared NiO fi lm was polycrystalline and presented as the nonstoichiometric compound Ni1+xO with Ni interstitials (oxygen vacancies). Resistanceswitching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (~103 orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin fi lm fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.
Abstract
We examined the electrical properties and microstructure of NiO produced using a solgel method and Ni nitrate hexahydrate (Ni[NO3]2·6H2O) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM)devices. It was found that as-prepared NiO fi lm was polycrystalline and presented as the nonstoichiometric compound Ni1+xO with Ni interstitials (oxygen vacancies). Resistanceswitching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (~103 orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin fi lm fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.
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