Distribution of Doublecortin Immunoreactivities in Developing Chick Retina
2
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
Doublecortin (DCX) is a microtuble-associated protein that is required for the migration of immature neuroblasts within the chick and mammalian brain. Although it is generally thought that DCX is expressed only in the neuroblasts, some mature neurons maintain DCX expression; for example, horizontal cells in adult rat retina. In this study, we demonstrate that retinal neural progenitors in the early embryonic stage of the chick also expressed DCX, as do developing ganglion cells and horizontal cells in later stages of development. These findings raise the possibility of a role for DCX in retinal neural progenitors, before they become specialized into neuroblasts in the chick.
Abstract
Doublecortin (DCX) is a microtuble-associated protein that is required for the migration of immature neuroblasts within the chick and mammalian brain. Although it is generally thought that DCX is expressed only in the neuroblasts, some mature neurons maintain DCX expression; for example, horizontal cells in adult rat retina. In this study, we demonstrate that retinal neural progenitors in the early embryonic stage of the chick also expressed DCX, as do developing ganglion cells and horizontal cells in later stages of development. These findings raise the possibility of a role for DCX in retinal neural progenitors, before they become specialized into neuroblasts in the chick.
참고문헌 (12)
- Cheek T F, "Dislocation reduction on SIMOX substrates by using multiple implants", MRS Proceedings, 107, pp.53~ (1988)
- Crean G M, "Feasibility of SIMOX material quality determination usingspectroellipsometry: comparison with Raman and planar viewtransmission electron microscopy", MRS Proceedings, 235, pp.139~ (1992)
- El-Ghor M K, "Formation of low dislocation density silicon-on-insulator by a single implantation and annealing", Appl. Phy. Lett, 57, pp.156~ (1990)
- Hill D, "The reduction of dislocations in oxygen implanted silicon-on-insulator layers by sequential implantation and annealing", J. Appl. Phys, 63, pp.4922~ (1988)
- Hirth J P, "Theory of Dislocations" (1982), Wiley
- Lee J D, "Stacking fault pyramid formation and energetics in silicon-on-insulator material formed by multiple cycles of oxygen implantation and annealing", Appl. Phys. Lett, 63, pp.3330~ (1993)
- Margail J, "Reduced defect density in silicon-on-insulator structures formed by oxygen implantation in two steps", Appl. Phys. Lett, 54, pp.526~ (1989)
- Ou X, "Gettering layer for oxygen accumulation in the initial stage of SIMOX processing", Nucl. Instr. Meth. B, 267, pp.1273~1276 (2009)
- Sears K, "A transmission electron microscopy study of defects formed through the capping layer of self-assembled InAs", GaAs quantum dot samples, 2006, pp.99, 113503~
- Park J C, "Role of oxygen precipitation processes in defect formation and evolution in oxygen implanted silicon-on-insulator material", MRS Proceedings, 279, pp.153~ (1992)
- van Ommen A H, "Low dislocation SOI by oxygen implantation", MRS Proceedings, 107, pp.43~ (1988)
- Venables D, "Low-dislocation-density silicon-on-insulator material produced by sequential oxygen implantation and low-temperature annealing", Appl. Phys. Lett, 60, pp.3147~ (1992)
