Thickness-dependent Electrical, Structural, and Optical Properties of ALD-grown ZnO Films
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The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layerdeposition (ALD) at various growth temperatures were investigated. In order to deposit ZnO films, diethylzinc anddeionized water were used as metal precursor and reactant, respectively. ALD process window was found at the growthtemperature range from 150oC to 250oC with a growth rate of about 1.7 Å/cycle. The electrical properties were studiedby using van der Pauw method with Hall effect measurement. The structural and optical properties of ZnO films wereanalyzed by using X-ray diffraction, field emission scanning electron microscopy, and UV-visible spectrometry as afunction of thickness values of ZnO films, which were selected by the lowest electrical resistivity. Finally, the figure ofmerit of ZnO films could be estimated as a function of the film thickness. As a result, this investigation of thicknessdependent electrical, structural, and optical properties of ZnO films can provide proper information when applying tooptoelectronic devices, such as organic light-emitting diodes and solar cells.
Abstract
The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layerdeposition (ALD) at various growth temperatures were investigated. In order to deposit ZnO films, diethylzinc anddeionized water were used as metal precursor and reactant, respectively. ALD process window was found at the growthtemperature range from 150oC to 250oC with a growth rate of about 1.7 Å/cycle. The electrical properties were studiedby using van der Pauw method with Hall effect measurement. The structural and optical properties of ZnO films wereanalyzed by using X-ray diffraction, field emission scanning electron microscopy, and UV-visible spectrometry as afunction of thickness values of ZnO films, which were selected by the lowest electrical resistivity. Finally, the figure ofmerit of ZnO films could be estimated as a function of the film thickness. As a result, this investigation of thicknessdependent electrical, structural, and optical properties of ZnO films can provide proper information when applying tooptoelectronic devices, such as organic light-emitting diodes and solar cells.
참고문헌 (14)
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