Growth and structural properties of β-Ga₂O₃ thin films on GaN substrates by an oxygen plasma treatment
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β-Ga₂O₃ thin films were successfully fabricated on the surface of GaN substrates by an oxygen plasma treatment. The thickness of the films was measured by scanning electron microscopy (SEM). The monoclinic structure and chemical composition of the β-Ga₂O₃ crystals were confirmed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). In addition, the surface morphology of the films was investigated by atomic force microscopy (AFM). The results obtained for the β-Ga₂O₃ thin films indicated the potential use of GaN crystals.
Abstract
β-Ga₂O₃ thin films were successfully fabricated on the surface of GaN substrates by an oxygen plasma treatment. The thickness of the films was measured by scanning electron microscopy (SEM). The monoclinic structure and chemical composition of the β-Ga₂O₃ crystals were confirmed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). In addition, the surface morphology of the films was investigated by atomic force microscopy (AFM). The results obtained for the β-Ga₂O₃ thin films indicated the potential use of GaN crystals.
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