Growth characterization of Ga2O3 thin films deposited on metal substrates by MOCVD and evaluation of electrical properties
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Ga2O3, like SiC and GaN, is a wide-bandgap material with excellent material characteristics, and extensive research onheteroepitaxy using various substrates is actively underway. In this study, we used a metal-organic chemical vapor deposition(MOCVD) method to grow Ga2O3 thin films on Ti and Ni substrates, commonly employed as electrodes. The Ga2O3 thinfilms were grown within the temperature range of 450 °C to 650 °C, and the characteristics of the thin films were evaluatedaccording to the substrate type and growth temperature. Both substrates form flat amorphous surfaces at low growthtemperatures, while rough crystalline structures form as the growth temperature increases. In addition, electrodes weredeposited on all substrates on which Ga2O3 films were grown, and the current-voltage (I-V) and capacitance-voltage (C-V)characteristics were evaluated. In current-voltage results, both substrates exhibited increased operating voltages as the growthtemperatures increased in the range of 450 °C and 550 °C. However, at temperatures of 600 °C and above, Ti substratesdisplayed leakage current paths, while Ni substrates showed minimal current flow. In capacitance-voltage results, Ti andNi substrates exhibited decreasing capacitance values with increasing growth temperature. Additionally, it was found thatvarious factors affect the electrical characteristics of both substrates. Furthermore, the observed high operating voltage isanticipated to be effectively utilized in TVS and varistor components.
Abstract
Ga2O3, like SiC and GaN, is a wide-bandgap material with excellent material characteristics, and extensive research onheteroepitaxy using various substrates is actively underway. In this study, we used a metal-organic chemical vapor deposition(MOCVD) method to grow Ga2O3 thin films on Ti and Ni substrates, commonly employed as electrodes. The Ga2O3 thinfilms were grown within the temperature range of 450 °C to 650 °C, and the characteristics of the thin films were evaluatedaccording to the substrate type and growth temperature. Both substrates form flat amorphous surfaces at low growthtemperatures, while rough crystalline structures form as the growth temperature increases. In addition, electrodes weredeposited on all substrates on which Ga2O3 films were grown, and the current-voltage (I-V) and capacitance-voltage (C-V)characteristics were evaluated. In current-voltage results, both substrates exhibited increased operating voltages as the growthtemperatures increased in the range of 450 °C and 550 °C. However, at temperatures of 600 °C and above, Ti substratesdisplayed leakage current paths, while Ni substrates showed minimal current flow. In capacitance-voltage results, Ti andNi substrates exhibited decreasing capacitance values with increasing growth temperature. Additionally, it was found thatvarious factors affect the electrical characteristics of both substrates. Furthermore, the observed high operating voltage isanticipated to be effectively utilized in TVS and varistor components.
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