The effect of temperature and conversion rate on the AlN microstructure synthesized by direct nitridization
2
조회
0
다운로드
3
인용
0
참고문헌
키워드
초록
Aluminum nitride (AlN) thin film has been synthesized by the direct nitridization of aluminum with heated NH3 gas. Theinfrared heating with focusing capability was adopted as a heat source and the reaction zone was constantly translated bycontrolling the sample stage. The metallic Al layer was deposited on the amorphous fused silica glass substrate using a thermalevaporation system at 3.0 × 10−6 Torr and the temperature profile of the reaction zone could be arbitrary chosen by varyingthe focal length of the IR reflector in the range of 600 ~ 800 oC. The polycrystalline AlN thin film was obtained with <100 nmthickness in a single step and the thickness of the AlN layer could be increased by the iterated steps. The morphology and thecrystalline quality of the AlN thin film have been characterized by the XRD, SEM, and EDS analyses.
Abstract
Aluminum nitride (AlN) thin film has been synthesized by the direct nitridization of aluminum with heated NH3 gas. Theinfrared heating with focusing capability was adopted as a heat source and the reaction zone was constantly translated bycontrolling the sample stage. The metallic Al layer was deposited on the amorphous fused silica glass substrate using a thermalevaporation system at 3.0 × 10−6 Torr and the temperature profile of the reaction zone could be arbitrary chosen by varyingthe focal length of the IR reflector in the range of 600 ~ 800 oC. The polycrystalline AlN thin film was obtained with <100 nmthickness in a single step and the thickness of the AlN layer could be increased by the iterated steps. The morphology and thecrystalline quality of the AlN thin film have been characterized by the XRD, SEM, and EDS analyses.
참고문헌 (19)
- Franco, , Ceramica, 50, pp.247~253 (2004)[DOI]
- V. W. L. Chin, , J. Appl. Phys., 75, pp.7365~7372 (1994)[DOI]
- K. Watari, , J. Am. Ceram. Soc., 79(7), pp.1979~1981 (1996)[DOI]
- G. Selvaduray, , Mat. Sci. Tech., 9(6), pp.463~473 (1993)[DOI]
- M. Miyanaga, , J. Cryst. Growth, 300, pp.45~49 (2007)[DOI]
- K. Kamei, , Phys. State. Sol., 4(7), pp.2211~2214 (2007)
- R. D. Vispute, , J. Appl. Phys., 77(9), pp.4724~4728 (1995)[DOI]
- M. Okamoto, , Jap. J. Appl. Phys., 38, pp.2114~ (1998)
- J. Keches, , J. Cryst. Growth, 240, pp.80~86 (2002)[DOI]
- F. L. Versnyder, , Mater. Sci. Eng., 6, pp.213~247 (1970)[DOI]
- M. Gell, , J. Metals, 39(7), pp.11~15 (1987)
- T. Okada, , J. Mat. Sci., 35, pp.3105~3111 (2000)[DOI]
- I.Satoh, , SEI Tech. Rev., 71, pp.78~82 (2010)
- M. Miyanaga, , J. Cryst. Growth, 300, pp.45~49 (2007)[DOI]
- 오창섭, "NH3를 이용한 반응성 증착법에 의한 AlN 박막의 우선배향특성에 관한 연구", 대한금속·재료학회지, 50(1), pp.78~85 (2012), 대한금속·재료학회
- Y. Qiu, , J. Eur. Ceram. Soc., 23, pp.2015~2022 (2003)[DOI]
- Gery, , J. Mat. Proc. Tech., 167, pp.393~401 (2005)[DOI]
- Y. H. Choi, , J. Therm. Sci., 21(1), pp.82~87 (2012)[DOI]
- K. Kwok, , Opt. Eng., 44(7), pp.1~11 (2005)