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Fabrication of thin film transistor using magnesium zinc oxide (MgZnO) as a semiconductor layer by magnetron sputtering technique

Amuthasurabi.M|Chandradass. J|Seong-Ju Park|Baskara Sethupathi.P
청정에너지연구소 (Clean-Energy Research Institute)|2019.07|Journal of Ceramic Processing Research|제20권 제1호|pp. 95-98|DOI 10.36410/jcpr.2019.20.1.95

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CharacteristicsSputteringSelf-heatingMgZnOTransistor
주제분류재료공학

초록

Inverted staggered thin film transistors (TFTs) using magnesium zinc oxide (MgZnO) material as a channel layer have beenfabricated over the glass substrate. A radio frequency magnetron sputtering technique was used to deposit thin films at a verylow temperature of 100 oC. The structural and electrical characteristics were investigated. The semiconductor film showsslightly enhanced grain size without any crack with few grain boundaries. For the first time the self heating effect on the TFTfabricated using MgZnO was discussed. The electrical characteristics of MgZnO based device exhibit reduced self-heatingeffect compared with undoped zinc oxide. The calculated parameters are carrier mobility 1.08 cm2/V-s, threshold voltage 15V, leakage current 10−10 A and current ratio (on/off) 10−5. The low deposition and processing temperatures make MgZnOTFTsvery promising for the flexible electronics.

Abstract

Inverted staggered thin film transistors (TFTs) using magnesium zinc oxide (MgZnO) material as a channel layer have beenfabricated over the glass substrate. A radio frequency magnetron sputtering technique was used to deposit thin films at a verylow temperature of 100 oC. The structural and electrical characteristics were investigated. The semiconductor film showsslightly enhanced grain size without any crack with few grain boundaries. For the first time the self heating effect on the TFTfabricated using MgZnO was discussed. The electrical characteristics of MgZnO based device exhibit reduced self-heatingeffect compared with undoped zinc oxide. The calculated parameters are carrier mobility 1.08 cm2/V-s, threshold voltage 15V, leakage current 10−10 A and current ratio (on/off) 10−5. The low deposition and processing temperatures make MgZnOTFTsvery promising for the flexible electronics.

참고문헌 (35)

  1. Y. Caglar, , J. Alloy. Comp, 621, pp.189~193 (2015)
  2. Mazran Esro, , Adv. Func. Mater, 25, pp.134~141 (2015)
  3. D. Z. Zhou, , J. Alloy. Comp, 648, pp.587~590 (2015)
  4. H. C. You, , J. Appl. Res. Technol, 13(2), pp.291~296 (2015)
  5. M. Amuthasurabi, "Influence of temperature on self-heating effect in ZnO based thin film transistor fabricated by magnetron sputtering technique", Journal of Ceramic Processing Research, 18(1), pp.41~44 (2017), 청정에너지연구소[DOI]
  6. M. H. Lee, , J. Appl. Phys, 102, pp.054508~ (2007)
  7. S. Inoue, , Jpn. J. Appl. Phys, 42, pp.4213~4217 (2003)
  8. Y. Zhang, , IEEE Electron Device Lett, 35, pp.345~347 (2014)
  9. Tae Young Ma, , Appl. Surf. Sci, 286, pp.131~136 (2013)
  10. Dedong Han, , Thin Solid Films, 594, pp.266~269 (2015)
  11. B. Alexander Cheremisin, , AIP Adv, 5, pp.117124~ (2015)
  12. Ahmed A. Al-Ghamdi, , Spectrochimica Acta Part A : Molecular and Biomolecular Spectroscopy, 131, pp.512~517 (2014)
  13. H. A. Chin, , J. Appl. Phys, 108, pp.054503~ (2010)
  14. Y. Kwon, , Appl. Phys. Lett, 84, pp.2685~2687 (2004)
  15. A. Ohtomo, , Appl. Phys. Lett, 72(19), pp.2466~2468 (1998)
  16. A. Onodera, , J. Appl. Phys, 36, pp.6008~6011 (1997)
  17. Y. Ogawa, , Phys. Status Solidi A, 202(9), pp.1825~1828 (2005)
  18. J. S. Wrench, , Appl. Phys. Lett, 105, pp.202109~ (2014)
  19. C. J. Ku, , J. Electron. Mater, 44, pp.3471~3476 (2015)
  20. Yi-Shiuan Tsai, , ECS Trans, 50(8), pp.173~178 (2013)
  21. I. C. Cheng, , ECS Trans, 50, pp.83~93 (2013)
  22. K. Tominaga, , Jpn. J. Appl. Phys, 32(1), pp.4131~ (1993)
  23. M. Amutha Surabi, , Mater. Manuf. Processes, 30(2), pp.175~178 (2015)
  24. P. Sagar, , J. Lumin, 126, pp.800~ (2007)
  25. M. H. Yang, , Thin Solid Films, 484, pp.39~45 (2005)
  26. M. Amuthasurabi, , Surf. Eng, 33, pp.816~819 (2017)
  27. T. Sivaraman, , Mater. Sci. Semicond. Process, 27, pp.915~923 (2014)
  28. A. K. Sahoo, , Thin Solid Films, 605, pp.129~135 (2016)
  29. Yung-Hao Lin, , Mater. Chem. Phys, 134, pp.1203~1207 (2012)
  30. Hong Yoon Jung, , Thin Solid Films, 522, pp.435~440 (2012)
  31. Manoj Kumar, , RSC Adv, 7, pp.27699~27706 (2017)
  32. Chi-Feng Weng, , J. Electrochem. Soc, 155, pp.H967~H970 (2008)
  33. A. Shaw, , Proc. ESSDERC, pp.206~209 (2015), IEEE
  34. ChangPeng Wang, , Phys. Status Solidi A, 215, pp.1700821~1700826 (2018)
  35. Chien-Yie Tsay, , Surf. Coat. Technol, 202, pp.1323~1328 (2007)

관련 논문AI추천

Influence of temperature on self-heating effect in ZnO based thin film transistor fabricated by magnetron sputtering techniqueM. Amuthasurabi청정에너지연구소 · Journal of Ceramic Processing Research2017 · 제18권 제1호Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode김태환, 노영수, 박동희, 양정도, 최원국, 최지원한국센서학회 · 센서학회지2013 · 제22권 제2호Effects of Post Annealing on the Electrical Properties of ZnO Thin Films Transistors김형섭, 나세권, 문미란, 안치홍, 이후정, 전하석, 정동근한국현미경학회 · Applied Microscopy2012 · 제42권 제4호Properties of indium doped zinc oxide thin films deposited by RF magnetron sputtering박세훈, 방준호, 송풍근, 조상현한국표면공학회 · 한국표면공학회지2010 · 제43권 제4호Diffusion Behaviors and Electrical Properties in the In-Ga-Zn-O Thin Film Deposited by Radio-frequency Reactive Magnetron Sputtering이석열, 이호성, 최재하한국표면공학회 · 한국표면공학회지2015 · 제48권 제6호RF Magnetron Sputtering으로 증착된 ZnO의 증착 특성과 이를 이용한 Thin Film Transistor 특성김영웅, 최덕균한국마이크로전자및패키징학회 · 마이크로전자 및 패키징학회지2007 · 제14권 제3호

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