Controlled infiltration profile of SiC coating layer on graphite by Si vapor deposition reaction
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SiC-coated graphite was successfully fabricated at different temperatures (1300-1600 oC) through a silicon vapor depositionreaction (Si-VDR) process. Si powder was used for the Si source of the SiC coating layers. When Si powder was evaporatedat high temperature near the melting point of bulk Si, Si gases are moved and changed into Si liquid at the surface of thegraphite. The high-temperature process facilitated the formation of SiC coating layers on the graphite. The microstructural,mechanical, and thermal oxidation properties of the coated graphite were investigated.
Abstract
SiC-coated graphite was successfully fabricated at different temperatures (1300-1600 oC) through a silicon vapor depositionreaction (Si-VDR) process. Si powder was used for the Si source of the SiC coating layers. When Si powder was evaporatedat high temperature near the melting point of bulk Si, Si gases are moved and changed into Si liquid at the surface of thegraphite. The high-temperature process facilitated the formation of SiC coating layers on the graphite. The microstructural,mechanical, and thermal oxidation properties of the coated graphite were investigated.
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