Studies of structural and electrical properties of La-Mg-Mn-Ti-O ceramic
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The samples with chemical formula La1-xMgxMn0.4Ti0.6O3 (x = 0.30, 0.40 and 0.50) were synthesized using solid-state reactionmethod. XRD of the samples shown the samples pattern attributed to the cubic structure with ‘a’ = 3.8943 and its space groupPm3m. The SEM images display microstructure of the sample were porous and the grains are merged with unequal sizesdistributed inhomogeously throughout the samples with irregular boundaries. The sample of x = 0.4 was the most porous thanthe others. The electrical properties were measured using LCR meter with the frequency range from 0.01 Hz until 100 KHzand in a temperature range of 313 K until 373 K. The electrical properties of the samples were study by analyzed the dielectricconstant, ε’, dielectric loss, ε”, and tan δ. The results for dielectric constant and dielectric loss showed the higher values werelocated at lower frequency region which suggest that the samples were having interfacial polarization. Tan δ shows the lowervalue at higher frequency and lower temperature. By doping Mg, it decreases the dielectric loss and increasing the Mg dopingit increases the dielectric constant.
Abstract
The samples with chemical formula La1-xMgxMn0.4Ti0.6O3 (x = 0.30, 0.40 and 0.50) were synthesized using solid-state reactionmethod. XRD of the samples shown the samples pattern attributed to the cubic structure with ‘a’ = 3.8943 and its space groupPm3m. The SEM images display microstructure of the sample were porous and the grains are merged with unequal sizesdistributed inhomogeously throughout the samples with irregular boundaries. The sample of x = 0.4 was the most porous thanthe others. The electrical properties were measured using LCR meter with the frequency range from 0.01 Hz until 100 KHzand in a temperature range of 313 K until 373 K. The electrical properties of the samples were study by analyzed the dielectricconstant, ε’, dielectric loss, ε”, and tan δ. The results for dielectric constant and dielectric loss showed the higher values werelocated at lower frequency region which suggest that the samples were having interfacial polarization. Tan δ shows the lowervalue at higher frequency and lower temperature. By doping Mg, it decreases the dielectric loss and increasing the Mg dopingit increases the dielectric constant.
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