Effect of annealing temperature on the properties of Cu2O thin films by RF magnetron sputter using Cu/Cu2O as composite targets
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Single phase of Cu2O films were deposited by RF magnetron sputter using composite targets containing Cu2O with 0 and 7wt % of Cu concentrations, respectively. The films were consequently annealed at temperatures from 250 to 550 oC. XRDresults showed a phase transformation from Cu3O4 CuO Cu2O for the films with 0 wt % Cu as annealing temperatureincreasing from room temperature to 350 oC. An enhancement of crystallization of Cu2O phase with annealing temperaturewas found in both films. FESEM demonstrated the grain sizes of both films increased from approximately 25~35 nm to100~140 nm as annealing temperatures increasing to 550 oC. The root mean square (Rms) roughness was approximately 14.8nm at room temperature and increased up to 46.7 nm at annealing temperature of 550 oC for 7 wt % of Cu. As a result, theoptimal electrical properties of Cu2O film was obtained, producing a resistivity of 0.19 Ω·cm, a carrier density of 2.25 × 1018cm3 and a mobility of 11.2 cm2·V−1·s−1 at annealing temperature of 450 oC. The transmittances s in the visible range was foundto decrease with increasing annealing temperature, while the optical band gaps are in the order of 2.45-2.63 eV.
Abstract
Single phase of Cu2O films were deposited by RF magnetron sputter using composite targets containing Cu2O with 0 and 7wt % of Cu concentrations, respectively. The films were consequently annealed at temperatures from 250 to 550 oC. XRDresults showed a phase transformation from Cu3O4 CuO Cu2O for the films with 0 wt % Cu as annealing temperatureincreasing from room temperature to 350 oC. An enhancement of crystallization of Cu2O phase with annealing temperaturewas found in both films. FESEM demonstrated the grain sizes of both films increased from approximately 25~35 nm to100~140 nm as annealing temperatures increasing to 550 oC. The root mean square (Rms) roughness was approximately 14.8nm at room temperature and increased up to 46.7 nm at annealing temperature of 550 oC for 7 wt % of Cu. As a result, theoptimal electrical properties of Cu2O film was obtained, producing a resistivity of 0.19 Ω·cm, a carrier density of 2.25 × 1018cm3 and a mobility of 11.2 cm2·V−1·s−1 at annealing temperature of 450 oC. The transmittances s in the visible range was foundto decrease with increasing annealing temperature, while the optical band gaps are in the order of 2.45-2.63 eV.
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