Microwave dielectric properties of Mg2Ti1-x(Ni1/3Sb2/3)xO4 ceramics
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Dependence of the dielectric properties of Mg2Ti1-x(Ni1/3Sb2/3)xO4 (0.025 ≤ x ≤ 0.1) on structural characteristics wereinvestigated at microwave frequencies. For the specimens sintered at 1450 °C for 4 h (single-step sintering), the quality factor(Qf ) initially increased with increasing (Ni1/3Sb2/3)4+ content (x) up to x = 0.05, and then decreased. Highest Qf value (182,270GHz) was obtained for the specimen with x = 0.05 sintered through two-step sintering (1450 °C, 10 min followed by 1400 °C,4 h) owing to its high densification and homogenous microstructure. The quality factor (Qf ) depends on relative density andbond valence which is dependent on the bond strength and length between oxygen ions and cations in the oxygen octahedronof the crystal structure. The highest bond strength was also confirmed for specimens with x = 0.05 based on shifts in the peakposition and full width at half maximum of the Raman mode. Overall, Mg2Ti0.95(Ni1/3Sb2/3)0.05O4 ceramics showed high Qf(=182,270 GHz), appropriate K(=14.13) and adjustable TCF(=-48.2 ppm/°C), which are applicable to telecommunicationsystems and the integration of devices at microwave frequencies.
Abstract
Dependence of the dielectric properties of Mg2Ti1-x(Ni1/3Sb2/3)xO4 (0.025 ≤ x ≤ 0.1) on structural characteristics wereinvestigated at microwave frequencies. For the specimens sintered at 1450 °C for 4 h (single-step sintering), the quality factor(Qf ) initially increased with increasing (Ni1/3Sb2/3)4+ content (x) up to x = 0.05, and then decreased. Highest Qf value (182,270GHz) was obtained for the specimen with x = 0.05 sintered through two-step sintering (1450 °C, 10 min followed by 1400 °C,4 h) owing to its high densification and homogenous microstructure. The quality factor (Qf ) depends on relative density andbond valence which is dependent on the bond strength and length between oxygen ions and cations in the oxygen octahedronof the crystal structure. The highest bond strength was also confirmed for specimens with x = 0.05 based on shifts in the peakposition and full width at half maximum of the Raman mode. Overall, Mg2Ti0.95(Ni1/3Sb2/3)0.05O4 ceramics showed high Qf(=182,270 GHz), appropriate K(=14.13) and adjustable TCF(=-48.2 ppm/°C), which are applicable to telecommunicationsystems and the integration of devices at microwave frequencies.
참고문헌 (43)
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