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Cu Metallization for Giga Level Devices Using Electrodeposition

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초록

The transition of interconnection metal from aluminum alloy to copper has been introduced to meet therequirements of high speed, ultra-large scale integration, and high reliability of the semiconductor device. Since cop-per, which has low electrical resistivity and high resistance to degradation, has diferent electrical and material char-copper interconnection. In this review, some important factors of multilevel copper damascene process have beensurveyed such as diffusion barier, sed layer, organic additives for bottom-up electro/electroless deposition, chemicalmechanical polishing, and capping layer to introduce the related issues and recent research trends on them.

Abstract

The transition of interconnection metal from aluminum alloy to copper has been introduced to meet therequirements of high speed, ultra-large scale integration, and high reliability of the semiconductor device. Since cop-per, which has low electrical resistivity and high resistance to degradation, has diferent electrical and material char-copper interconnection. In this review, some important factors of multilevel copper damascene process have beensurveyed such as diffusion barier, sed layer, organic additives for bottom-up electro/electroless deposition, chemicalmechanical polishing, and capping layer to introduce the related issues and recent research trends on them.

참고문헌 (73)

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