Hot Wall Epitaxy (HWE)법에 의한 ZnIn2S4 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구
Growth and photocurrent study on the splitting of the valence band for ZnIn2S4 single crystal thin film by hot wall epitaxy
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Abstract
Single crystal ZnIn2S4 layers were grown on a oC withthe hot wall epitaxy (HWE) system by evaporating the polycrystal source of ZnIn2S4 at 610oC prepared from horizontalelectric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence anddouble crystal X-ray difraction (DCXD). The carrier density and mobility of single crystal ZnIn2S4 thin films measuredwith Hall effect by van der Pauw method are 8.51×1017 electron/cm3, 291 cm2/v-s at 293 K, respectively. The photocurrentand the absorption spectra of ZnIn2S4 /SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. Thetemperature dependence of the energy band gap of the ZnIn2S4 obtained from the absorption spectra was well describedby the Varshni's relation, Eg(T)=2.9514 eV(7.24×104 eV/K)T2/(T+489 K). Using the photocurrent spectra and theHopfield quasicubic model, the crystal field energy(cr) and the spin-orbit spliting energy(so) for the valence band ofthe ZnIn2S4 have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The thre photocurrent peaksobserved at 10 K are ascribed to the A1-, B1-, and C41-exciton peaks.
참고문헌 (16)
- "“Analysis of the electrical and luminescent properties of ZnIn2S4”", pp.1777~1782 (1975)
- "“Luminescence and impurity states in ZnIn2S4”", shio(ya and g), pp.19 1369~1376 (1983)
- "“Infrared lattice vibration spectra of ZnIn2S4”", pp.449~454 (1978)
- "“Growth by directional freezing of ZnIn2S4 and diffused homojunctions in bulk material”", pp.27~41 (1984)
- "“X-ray photoelectron and Auger electron spectroscopic analysis of surface treatments and electrochemical decomposition of ZnIn2S4 photo electrodes”", pp.4761~4771 (1985)
- "“The optical properties of CdS crystal grown by the sublimation method”", 218, pp.19~26 (2000)
- "“The optical properties of ZnIn2S4 thin films”", pp.67~72 (1978)
- "“The characterization of ZnSe", GaAs epilayers grown by hot wall epitaxy”, 1997, pp.172, 89~96
- "Elements of X-ray Diffractions", chap 11 (1985)
- Parkes, "“Growth of large ZnIn2S4 single crystals”", pp.414~417 (1973)
- Fujita, "“Electron radition damage in Cadium-Selenide crystal at liquid-helium temperrature”", pp.109~113 (1965)
- "“Far-infrared optical absorption of Fe2+ in ZnSe”", pp.149~154 (1967)
- Segall, "Physics and Chemistry of - Compounds", pp.340~349 (1967), North-Holland
- 홍광준, "“수직 Bridgman 법에 의한 CdTe 단결정 성장과 특성”", 14(6), pp.869~878 (2005)
- 홍광준, "“Photoluminescience properties for CdIn2Te4 single crystal grown by Bridgman method”", 15(6), pp.379~385 (2006)
- 홍광준, "Hot Wall epitaxy(HWE)법에 의해 성장된 AgInS2 박막의 광전류 온도 의존성", 16(1), pp.1~6 (2007)