Hot Wall Epitaxy 방법에 의해 성장된 AgInS2 박막의 광전류 온도 의존성
Temperature dependence of photocurrent for the AgInS2 epilayers grown by hot wall epitaxy
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Abstract
A silver indium sulfide (AgInS2) epilayer was grown by the hot wall epitaxy method, which has not been reported in2 epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal.From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were onlyobserved, whereas the three peaks of A, B, and C were sen in the PC spectrum of 10 K. These peaks are ascribed tothe band-to-band transition. The valence band spliting of AgInS2 was investigated by means of the photocurrentmeasurement. The crystal field spliting, cr, and the spin orbit splitting, so, have ben obtained to be 0.150 eV and0.09 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also,the temperature dependence of the energy band gap, Eg
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