스트레스 감도 향상을 위한 턴 온 직후의 조름 효과를 이용한 얇은 질화막 폴리실리콘 전계 효과 트랜지스터 압력센서
A Polysilicon Field Effect Transistor Pressure Sensor of Thin Nitride Membrane Choking Effect of Right After Turn-on for Stress Sensitivity Improvement
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We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at Vtn, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.
Abstract
We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at Vtn, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.
참고문헌 (16)
- T. P. Burg, "Weighing of biomolecules, single cells and single nanoparticles in fluid", Nature, 446(7139), pp.1066~1069 (2007)
- M. S. Cha, "Biomolecular detection with a thin membrane transducer", LAB ON A CHIP, 8(6), pp.932~937 (2008), ROYAL SOC CHEMISTRY
- S. Pramanik, "Developments of immobilized surface modified piezoelectric crystal biosensors for advanced applications", Int. J. of Electrochemical Science, 8(6), pp.8863~8892 (2013)
- F. Huber, "Direct detection of a BRAF mutation in total RNA from melanoma cells using cantilever arrays", Nature Nanot., 8(2), pp.125~129 (2013)
- K. S. Hwang, "In-situ quantitative analysis of a prostatespecific antigen (PSA) using a nanomechanical PZT cantilever", Lab Chip, 4(6), pp.547~552 (2004)
- 정영도, "pH Measurements with a Microcantilever Array-Based Biosensor System", 센서학회지, 21(3), pp.186~191 (2012), 한국센서학회[DOI]
- R. C. Jaeger, "CMOS stress sensors on (100) silicon", IEEE J. of Solid-State Citcuits, 35, pp.85~95 (2000)
- 김관수, "Easy Detection of Amyloid -Protein Using Photo-Sensitive Field Effect", 센서학회지, 21(5), pp.339~344 (2012), 한국센서학회[DOI]
- 임정옥, "알츠하이머 진단을 위한 당성분에 민감한 초파리 세포기반 ISFET센서개발", 센서학회지, 22(4), pp.281~285 (2013), 한국센서학회
- A. D. Koehler, "Extraction of AlGaN GaN HEMT gauge factor in the presence of traps", IEEE Elect. Dev. Lett., 31, pp.665~667 (2010)
- M. Chu, "Simulation of AlGaN", GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility, 2010, pp.108(10), 104502~
- M. D. Jacunski, "Threshold voltage, field effect mobility, and gate to channel capacitance in polysilicon TFT's", IEEE Trans. Electr. Dev., 40, pp.1433~1440 (1996)
- M. Kimura, "Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display", IEEE Trans. Electr. Dev., 46(12), pp.2282~2288 (1999)
- N. Ueda, "Pre-diction of stress induced characteristic changes for small scale analog IC", IEEE Conference on Microelectronic Test Structures, pp.107~110 (2008)
- A. T. Bradley, "Piezoresistive characteristics of short-channel MOSFETs on (100) silicon", IEEE Trans. Electr. Dev., 40, pp.2009~2014 (2001)
- R. Raiteria, "Micromechanical cantilever-based biosensors", Sens. Actuator B-Chem., 4010, pp.1~12 (2001)