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수직 Bridgman 법에 의한 CdTe 단결정 성장과 특성

Growth and characterization of CdTe single crystal by vertical Bridgman method

홍광준|홍명석
한국센서학회|2005.11|센서학회지 (Journal of Sensor Science and Technology)|제14권 제6호|pp. 369-373

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참고문헌

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초록

Abstract

High quality CdTe single crystal for the solar cell fabrication was grown by vertical Bridgman method. The etch pits patterns of (111) surfaces of CdTe etched by Nakagawa solution was observed the (111)A compesed of Cd atoms with typical triangle etch pits of pyramid mode. From the photoluminescence measurement on (111)A, we observed free exciton (Ex) existing only high quality crystal and neutal acceptor bound exciton (A0,X) having very strong peak intensity. Then, the full width at half maximum and binding energy of neutral acceptor bound exciton were 7 meV and 5.9 meV, respectively. By Haynes rule, an activation enery of impurity was 59 meV. Therefore, the origins on impurity level acting as a neutral acceptor were associated Ag or Cu elements.

참고문헌 (25)

  1. ?R. K. Willardson, "Semiconductors and semimetals", 18 academic (1981)
  2. T. C. Antony,A. L. Fahrenbuch,M. G. Perters, "Heterojunction formation in CdTe", CuInS2 ternary solar cells, pp.400, pp.57, 1985~
  3. ?V. P. Singh, "CdTe", CdS heterojunction photovoltaic detector, 1995, pp.78, 1995~
  4. ?M. C. Chen, "Analysis of the electrical and luminescent properties of CdTe", 78, pp.4787~ (1995)
  5. A. L. Farenbruch,V. Vasilchenko,F. Buch,K. Mitchell, "Luminescence and impurity states in CdTe", 25, pp.605~ (1974)
  6. ?O. Igarashi, "Polycrystalline CdTe photoelectrochemical cells", 42, pp.4035~ (1971)
  7. K. Yamaguchi,H. Matsumoto,N. Nakayama,and S. Ikegami, "Infrared lattice vibration spectra of CdTe", 15, pp.1575~ (1976)
  8. G. R. Awan,A. W. Brinkman,G. J. Russell,and K. Woods, "Growth by directional freezing of CdTe and diffused homojunctions in bulk material", 85, pp.477~ (1987)
  9. ?G. Leo,A. V. Drigo,N. Lovergine,and A. M. Mancini, "X-ray photoelectron and Auger electron spectroscopic analysis of surface treatments and electro- chemical decomposition of CdTe photo electrodes", 70, pp.2041~ (1991)
  10. ?S. Yoshimura, "The optical properties of CdTe thin films thin solid films", 34, pp.1459~ (1995)
  11. ?B. Segall,M. R. Lorenz,and R. E. Hasted,, "The characterization of CdTe", GaAs epilayers grown by hot wall epitaxy, 1963., pp.129, 2471~
  12. ?K. Nakagawa,K. Maeda,and S. Takeuchi, "Growth of large CdTe single crystals", 34, pp.1979~
  13. ?Y. C. Lu,R. K. Route,D. Elwell,and R. S. Feigelson, "The optical properties of CdTe crystal grown by the sublimation method", a3, pp.264~ (1985)
  14. ?I. Hahnert,M. Muhlberg,H. Berger,and C. Genzel, "Electron radition damage in cadium-selenide crystal at liquid-helium temperrature", 142, pp.310~ (1994)
  15. ?P. F. Fewster, "Far-infrared optical absorption of Fe2+ in ZnSe", 54, pp.4668~ (1983)
  16. J. L. Boone,G. Cantwell,W. C. Harsch,J. E. Thomas, "Study of the band edge in CdTe by photovoltaic effect", 139, pp.27~ (1994)
  17. ?D. E. Cooper,J. Bajai,and P. R. Newman, "Transport properties of CdTe single crystal", 86, pp.1988~
  18. S. Seto,A. Tanaka,Y. Masa,S. Dairaku, "Photoluminescience and phconductivity measurements on CdTe", 53, pp.1524~ (1988)
  19. E. Molva,J. L. Pautrat,K. Saminadayer,G. Milchberg, "Saturation photoconductivity in CdTe", 30, pp.3344~ (1984)
  20. ?J. M. Francou,K. Saminadayer,and J. L. Pautrat, "Growth by directional freezing of CdTe and diffused homojunctions in bulk material", 41, pp.1990~
  21. ?K. H. Hellwege, "Numerical kata and functional relationships in science and technology", springer-verlag, pp.226 1982~
  22. N. C. Giles-Taylor,R. N. Bicknell,D. K. Blanks,T. H. Myers, "X-ray photoelectron and auger electron spectroscopic analysis of surface treatments and electrochemical decomposition of CdTe photoelectrodes", a3, pp.76~ (1985)
  23. ?R. K. Willardson, "Semiconductors and semimetals", 13 academic (1978)
  24. ?K. J. Hong, "Photocurrent study on the splitting of the valence band and growth of CuAlSe2 single crystal thin film by hot wall epitaxy", 13, pp.2 (2004), 157~
  25. ?K. J. Hong, "Optoelectrical properties of HgCdTe epilayers grown by hot wall epitaxy", 13, pp.4 (2004), 122~

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