Photoluminescience properties for CdIn2Te4 single crystal grown by Bridgman method
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Abstract
Single crystal of p-CdIn2Te4 was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown CdIn2Te4 crystal and the various heat-treated crystals, the (Do, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the CdIn2Te4:Cd, while the (Ao, X) emission completely disappeared in the CdIn2Te4:Cd. However, the (Ao, X) emission in the photoluminescence spectrum of the CdIn2Te4:Te was the dominant intensity like in the as-grown CdIn2Te4 crystal. These results indicated that the (Do, X) is associated with VTe which acted as donor and that the (Ao, X) emission is related to VCd which acted as acceptor, respectively. The p-CdIn2Te4 crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of (Do, Ao) emission and its to phonon replicas is related to the interaction between donors such as VTe or Cdint, and acceptors such as VCd or Teint. Also, the In in the CdIn2Te4 was confirmed not to form the native defects because it existed in a stable bonding form.
참고문헌 (14)
- "Numerical Data and Functional Relationships in Science and Technology edited by O. Madelung", 17, pp.124~128 (1985)
- "The dielectric constant measurement of CdIn2Te4", 10, pp.241~245 (1985)
- "The electronic characteristics of n-type CdIn2Te4", 57, pp.355~357 (1989)
- "Crystallographic properties of some ternart and multinary Te-based semiconductors", 62, pp.1500~1504 (1987)
- "Infrared and raman spectra of CdIn2Te4", 78, pp.211~215 (1991)
- "Current transport in p-type CdIn2Te4 schottkt diodes", 10, pp.297~300 (1985)
- "Structural and optical properties of CdIn2Te4 grown by temperature gradient vapor transport ceposition", 15, pp.27~31 (1960)
- "High-frequency dielectric constant of CdIn2Te4 ordered-vacancy compounds", 119, pp.1960~
- "Structural distortions and polymorphic behaviour in CdIn2Te4 tetrahedral compounds", 12, pp.1980~
- "Photoconductivity of CdIn2Te4", 44, pp.5522~5526 (1991)
- "The electrical properties of polycrystalline CdIn2Te4 thin films", 159, pp.649~653 (1967)
- "Covalent bonding effect on van vleck paramagnetism in CdIn2Te4 semiconductor compounds", 12, pp.205~209 (1977)
- "Growth of ZnO thin film by pulsed laser depositin and photocurrent study on the splitting of valance band", 14(3), pp.160~168 (2005)
- "Optoelectrical properties of HgCdTe epilayers grown by hot wall epitaxy", 13(4), pp.122~1126 (2004)