SOI 핸들 웨이퍼에 고정된 광다이오드를 가진 SOI CMOS 이미지 센서
SOI CMOS image sensor with pinned photodiode on handle wafer
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Abstract
We have fabricated SOI CMOS active pixel image sensor with the pinned photodiode on handle wafer in order to reducedark currents and improve spectral response. The structure of the active pixel image sensor is 4 transistors APS whichfloating difusion on handle wafer. The source of dark current caused by the interface traps located on the surface of aphotodiode is able to be eliminated, as we apply the pinned photodiode. The source of dark curents between shallowtrench isolation and the depletion region of a photodiode can be also eliminated by the planner proces of the hybridbulk/SOI structure. The photodiode could be optimized for beter spectral response because the process of a photodiodeon handle wafer is independent of that of transistors on sed wafer. The dark current was about 6 pA at 3.3 V of floatingdifusion voltage in the case of transfer gate TX=0 V and TX=3.3 V, respectively. The spectral response of the pinedphotodiode was observed flat in the wavelength range from green to red.
참고문헌 (11)
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