더블 게이트 구조의 탄소 나노 튜브 트랜지스터 바이오 센서의 제작
Fabrication of the CNT-FET biosensors with a double-gate structure
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In this paper, we present the carbon nanotube field-effect transistor(CNT-FET) with a double-gate structure. A Carbon nanotube film was aligned by the Langmuir-Blodgett technique and SiNx was deposited to protect from water, oxygen, and other contaminants. We measured the electrical characteristics of the proposed device as the function of the VBG, VTG. From this result, we can confirm that proposed device might be employed as a biosensor.
Abstract
In this paper, we present the carbon nanotube field-effect transistor(CNT-FET) with a double-gate structure. A Carbon nanotube film was aligned by the Langmuir-Blodgett technique and SiNx was deposited to protect from water, oxygen, and other contaminants. We measured the electrical characteristics of the proposed device as the function of the VBG, VTG. From this result, we can confirm that proposed device might be employed as a biosensor.
참고문헌 (12)
- S. J. Tans, "Room-temperature transistor based on a single carbon nanotube", Nature, 393, pp.49~52 (1998)
- M. Abe, "Quantiatatve detection of protein using a top-gate carbon nanotube field effect transistor", J. Phys. Chem. C, 111, pp.8667~8670 (2007)
- D. Piscevic, "Surface plasmon mircroscopy of biotin-streptavidin binding reactions on UV-photopatterned alkanthiol selfassembled monolayers", Superamolecular Science, 2, pp.99~106 (1995)
- H. Zhu, "Global analysis of protein activities using proteome chip", Science, 293, pp.2101~2105 (2001)
- C. B. Yuan, "Energy landscape of streptavidin-biotin complexes meaured by atomic force microscopy", Biochemistry, 39, pp.10219~10223 (2000)
- 박지은, "AFM을 이용한 스트렙타비딘-바이오틴 단백질 복합체의 흡착 분석", 센서학회지, 15(4), pp.237~244 (2006), 한국센서학회
- 박혜정, "스렙타비딘- 바이오틴 단백질 복합체 검출을 위한 PMOSFET형 바이오센서", 한국센서학회 종합학술대회 논문집, pp.151~152 (2003)
- P. Ramirez, "Carbon nanotube for science and technology", Bell Labs Technical Journal, 10(3), pp.171~185 (2005)
- 이완성, "단일벽 탄소 나노 튜브 Langmuir-Blodgett 막의 특성평가 및 응용", 석사, pp.2007
- D. Kaminishi, "Air-stable n-type carbon nanotube field-effect transistor with Si3N4 passivation films fabricated by catalytic chemical vapor deposition", Applied Physics Letters, 86, pp.113115~ (2005)
- K. Maehashi, "Electrical characterization of carbon nanotube field-effcet transistors with SiNx passivation films deposited by catalytic chemical vapor deposition", Applied Physics Letters, 92, pp.183111~ (2008)