Effect of Substrate Temperature on Electrical and Optical Properties of Al Doped ZnO Thin Films by Continuous Composition Spread
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Al doped ZnO(AZO) thin films were deposited at different substrate temperatures by a continuous composition spread(CCS) method. Various compositions of Al doped ZnO thin films deposited at substrate temperatures between 0 and 250 °C were explored to find excellent electrical and optical properties. The AZO thin film deposited at 100 °C had the lowest resistivity, 9 10-4 cm and its average transmittance at the 400 to 700 nm wavelength region was 92 %. Optimized composition of the AZO thin film which had the lowest resistivity and high transmittance was 3.13 wt% Al doped ZnO.
Abstract
Al doped ZnO(AZO) thin films were deposited at different substrate temperatures by a continuous composition spread(CCS) method. Various compositions of Al doped ZnO thin films deposited at substrate temperatures between 0 and 250 °C were explored to find excellent electrical and optical properties. The AZO thin film deposited at 100 °C had the lowest resistivity, 9 10-4 cm and its average transmittance at the 400 to 700 nm wavelength region was 92 %. Optimized composition of the AZO thin film which had the lowest resistivity and high transmittance was 3.13 wt% Al doped ZnO.
참고문헌 (18)
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