The characteristics of Al-doped ZnO films deposited with RF magnetron sputtering system in various H2/ (Ar+H2) gas ratios
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The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200 ο C and in 2 × 10-2Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~ 9.21 × 10-4 Ωcm) was lowest and mobility (~17.8 cm2 / Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5%. When the H2/(Ar + H2) gas ratio was increased above 2.5%, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0% to 7.5%. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90% and an orientation of the deposition was [002] orientation for AZO films grown with all H2/ (Ar + H2) gas ratios.
Abstract
The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200 ο C and in 2 × 10-2Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~ 9.21 × 10-4 Ωcm) was lowest and mobility (~17.8 cm2 / Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5%. When the H2/(Ar + H2) gas ratio was increased above 2.5%, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0% to 7.5%. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90% and an orientation of the deposition was [002] orientation for AZO films grown with all H2/ (Ar + H2) gas ratios.
참고문헌 (15)
- S.L. King, , Appl. Surf. Sci, 96-98, pp.811~818 (1996)
- B. Hong, , Surface Coat technology, 201, pp.3188~3192 (2006)
- P. Kasai, , Phys. Rev, 130, pp.989~995 (1963)
- C. G. van de Walle, , Phys. Rev. Lett, 85, pp.1012~1015 (2000)
- C. G. van de Walle, , Nature (London), 423, pp.626~629 (2003)
- K. L. Chopra, , Thin Solid Films, 102, pp.1~46 (1983)
- S. A. Studeniki, , J. Appl. Phys, 87, pp.2413~2420 (2000)
- X. -T. Hao, , Mater. Sci. Eng., B, 90, pp.50~54 (2002)
- T. Minami, , Thin Solid Films, 253, pp.14~19 (1994)
- J. Song, , J. Korean Phys. Soc, 29, pp.219~224 (1996)
- A. Suzuki, , Jpn. J. Appl. Phys, 35, pp.L56~L59 (1996)
- Y. M. Lu, , Mater. Chem. Phys, 72, pp.269~272 (2001)
- S. Yanfeng, , Vacuum, 80, pp.981~985 (2000)
- R. Cebulla, , J. Appl. Phys, 83, pp.1087~1095 (1998)
- M. K. Hudiat, , Mater. Sci. Eng. B, 60(1), pp.1~11 (1999)