마이크로볼로미터용 [(Ni0.3Mn0.7)1-xCux]3O4 박막의 제작 및 전기적 특성 분석
Fabrication and Electrical Property Analysis of [(Ni0.3Mn0.7)1-xCux]3O4 Thin Films for Microbolometer Applications
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In order to develop novel thermal imaging materials for microbolometer applications, [(Ni0.3Mn0.7)1-xCux]3O4 (0.18 ≤ x ≤ 0.26) thin films were fabricated using metal-organic decomposition. Effects of Cu content on the electrical properties of the annealed films were investigated. Spinel thin films with a thickness of approximately 100 nm were obtained from the [(Ni0.3Mn0.7)1-xCux]3O4 films annealedat 380oC for five hours. The resistivity (ρ) of the annealed films was analyzed with respect to the small polaron hopping model. Based on the Mn3+/Mn4+ ratio values obtained through x-ray photoelectron spectroscopy analysis, the hopping mechanism between Mn3+ andMn4+ cations discussed in the proposed study. The effects of Cu+ and Cu2+ cations on the hopping mechanism is also discussed. Obtainedresults indicate that [(Ni0.3Mn0.7)1-xCux]3O4 thin films with low temperature annealing and superior electrical properties (ρ ≤ 54.83 Ω·cm,temperature coefficient of resistance > -2.62%/K) can be effectively employed in applications involving complementary metal-oxide semiconductor (CMOS) integrated microbolometer devices.
Abstract
In order to develop novel thermal imaging materials for microbolometer applications, [(Ni0.3Mn0.7)1-xCux]3O4 (0.18 ≤ x ≤ 0.26) thin films were fabricated using metal-organic decomposition. Effects of Cu content on the electrical properties of the annealed films were investigated. Spinel thin films with a thickness of approximately 100 nm were obtained from the [(Ni0.3Mn0.7)1-xCux]3O4 films annealedat 380oC for five hours. The resistivity (ρ) of the annealed films was analyzed with respect to the small polaron hopping model. Based on the Mn3+/Mn4+ ratio values obtained through x-ray photoelectron spectroscopy analysis, the hopping mechanism between Mn3+ andMn4+ cations discussed in the proposed study. The effects of Cu+ and Cu2+ cations on the hopping mechanism is also discussed. Obtainedresults indicate that [(Ni0.3Mn0.7)1-xCux]3O4 thin films with low temperature annealing and superior electrical properties (ρ ≤ 54.83 Ω·cm,temperature coefficient of resistance > -2.62%/K) can be effectively employed in applications involving complementary metal-oxide semiconductor (CMOS) integrated microbolometer devices.
참고문헌 (17)
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