대면적 저누설 커패시터를 위한 최적화 블레이드 코팅 기반 고분자 유전체 프린팅
Printing of Polymer Dielectric via Optimal Blade Coating for Large-scale Low-Leakage Capacitors
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We demonstrated a polymer dielectric with low leakage characteristics through an optimal blade coating method for low-cost and large-scale fabrication of metal-insulator-metal (MIM) capacitors. Cross-linked poly(4-vinylphenol) (C-PVP), which is a typically used polymer dielectric, was coated on a 10 × 10 cm indium-tin-oxide (ITO) deposited glass substrate by changing the deposition temperature (TD) and coating velocity (VC) in the blade coating. During the blade coating, the thickness of the thin c-PVP varied depending on TD and VC owing to the ‘Landau-Levich (LL) regime’. The c-PVP-dielectric-based MIM capacitor fabricated in this study showed the lowest leakage current characteristics (10-6A/cm2 at 1.2 MV/cm2 , annealing at 200 °C) and uniform electrical characteristics when TD was 30 °C and VC was 5 mm/s. In addition, at TD = 30 °C, stable leakage characteristics were confirmed when a different electric field was applied. These results are expected to positively contribute to applications with next-generation electronic devices.
Abstract
We demonstrated a polymer dielectric with low leakage characteristics through an optimal blade coating method for low-cost and large-scale fabrication of metal-insulator-metal (MIM) capacitors. Cross-linked poly(4-vinylphenol) (C-PVP), which is a typically used polymer dielectric, was coated on a 10 × 10 cm indium-tin-oxide (ITO) deposited glass substrate by changing the deposition temperature (TD) and coating velocity (VC) in the blade coating. During the blade coating, the thickness of the thin c-PVP varied depending on TD and VC owing to the ‘Landau-Levich (LL) regime’. The c-PVP-dielectric-based MIM capacitor fabricated in this study showed the lowest leakage current characteristics (10-6A/cm2 at 1.2 MV/cm2 , annealing at 200 °C) and uniform electrical characteristics when TD was 30 °C and VC was 5 mm/s. In addition, at TD = 30 °C, stable leakage characteristics were confirmed when a different electric field was applied. These results are expected to positively contribute to applications with next-generation electronic devices.
참고문헌 (26)
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