유연성 유기 박막트랜지스터 적용을 위한 다층 게이트 절연막의 전기적 및 기계적 특성 향상 연구
Improvement of Electrical and Mechanical Characteristics of Organic Thin Film Transistor with Organic/Inorganic Laminated Gate Dielectric
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In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic HfO₂ layers with the thickness of 5~20nm was inserted in between the spin-coated PVP layers. Insertion of the inorganic HfO₂ in the laminated organic/ inorganic structure of PVP/HfO₂/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/HfO₂/ PVP layer with the thickness of 20-nm HfO₂ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/HfO₂(20nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer
Abstract
In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic HfO₂ layers with the thickness of 5~20nm was inserted in between the spin-coated PVP layers. Insertion of the inorganic HfO₂ in the laminated organic/ inorganic structure of PVP/HfO₂/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/HfO₂/ PVP layer with the thickness of 20-nm HfO₂ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/HfO₂(20nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer
참고문헌 (18)
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