고 방사선 환경을 위한 상용 디지털-아날로그 컨버터의 감마선 조사 시험 결과 및 분석
The Irradiation Test Result and Analysis of a Commercial Digital-to-Analog Converter for Using in Harsh Radiation Environments
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초록
This work presents irradiation test results of a commercial digital-to-analog converter(DAC) which is an essential component widely used in circuits and systems to convert naturalsignals from digital bits. Especially, a DAC requires a radiation tolerance in nuclear applications,for instance a nuclear black box which can store and transfer necessary data observed the statusof nuclear reactors in accident situations like Fukushima. The selected DAC is AD5433 of 10-bit and 10 MHz for multipurpose applications such as waveform generators, analog processing,instruments, programmable amplifiers and attenuators, digitally controlled calibration, compositevideo, and ultrasound. The test PCB includes two design-under-test (DUT) DACs controlled by amicrocontroller communicating with a PC. We observed the DUTs for 21 hours in the facility of highgamma energy irradiation at KAERI. The 10 V DAC outputs reached 3% of an allowable error after51 and 48 mins at the irradiation dose of 846 and 825 Gy, respectively. In the environment of severeaccidents, electrical components for observing reactor behaviors should be survived up to 5 kGyin total ionizing dose for approximately 72 hours that is minimum time to mitigate the accidentalsituation as soon as possible. However, the DACs were operated under 1 kGy, that is, we need abetter DAC specialized for the nuclear applications required such harsh environments.
Abstract
This work presents irradiation test results of a commercial digital-to-analog converter(DAC) which is an essential component widely used in circuits and systems to convert naturalsignals from digital bits. Especially, a DAC requires a radiation tolerance in nuclear applications,for instance a nuclear black box which can store and transfer necessary data observed the statusof nuclear reactors in accident situations like Fukushima. The selected DAC is AD5433 of 10-bit and 10 MHz for multipurpose applications such as waveform generators, analog processing,instruments, programmable amplifiers and attenuators, digitally controlled calibration, compositevideo, and ultrasound. The test PCB includes two design-under-test (DUT) DACs controlled by amicrocontroller communicating with a PC. We observed the DUTs for 21 hours in the facility of highgamma energy irradiation at KAERI. The 10 V DAC outputs reached 3% of an allowable error after51 and 48 mins at the irradiation dose of 846 and 825 Gy, respectively. In the environment of severeaccidents, electrical components for observing reactor behaviors should be survived up to 5 kGyin total ionizing dose for approximately 72 hours that is minimum time to mitigate the accidentalsituation as soon as possible. However, the DACs were operated under 1 kGy, that is, we need abetter DAC specialized for the nuclear applications required such harsh environments.
참고문헌 (10)
- Chung Y-H, "A 12- bit 40-MS", s SAR ADC With a Fast-Binary-Window DAC Switching Scheme, 2018, pp.26(10), 1989~1998
- Cressler J, "Extreme Enviornment Electronics" (2013), CRC Press
- Fan H, "A 4-Channel 12-Bit High-Voltage Radiation-Hardened Digital-to-Analog Converter for Low Orbit Satellite Applications", IEEE T. CIRCUITS-I, 65(11), pp.3698~3706 (2018)
- Zachary E. Fleetwood, "Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems", IEEE Transactions on Device and Materials Reliability, 14(3), pp.844~848 (2014), Institute of Electrical and Electronics Engineers (IEEE)[DOI]
- Vladimir Gromov, "A Radiation Hard Bandgap Reference Circuit in a Standard 0.13 $\mu$m CMOS Technology", IEEE Transactions on Nuclear Science, 54(6), pp.2727~2733 (2007), Institute of Electrical and Electronics Engineers (IEEE)[DOI]
- Sunghoon Kim, "TID-Tolerant Inverter Designs for Radiation-Hardened Digital Systems", Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 954, pp.161473~ (2018), Elsevier BV[DOI]
- M. Manghisoni, "Comparison of ionizing radiation effects in 0.18 and 0.25 μm cmos technologies for analog applications", IEEE Transactions on Nuclear Science, 50(6), pp.1827~1833 (2003), Institute of Electrical and Electronics Engineers (IEEE)[DOI]
- V. Re, "Total ionizing dose effects on the noise performances of a 0.13", spl mu, IEEE Transactions on Nuclear Science, pp.2006, 53(3)[DOI]
- Nelson S. Saks, "Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides", IEEE Transactions on Nuclear Science, 33(6), pp.1185~1190 (1986), Institute of Electrical and Electronics Engineers (IEEE)[DOI]
- James R. Schwank, "Radiation Effects in MOS Oxides", IEEE Transactions on Nuclear Science, 55(4), pp.1833~1853 (2008), Institute of Electrical and Electronics Engineers (IEEE)[DOI]
