Radiation-hardened-by-design preamplifier with binary weighted current source for radiation detector
1
조회
0
다운로드
1
인용
0
참고문헌
키워드
초록
This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects. The CSA consists of an operational amplifier (OPAMP) with a 6-bit binary weighted current source (BWCS) and feedback network. The replica circuit is utilized to compensate for the TID effects of the CSA. Two comparators can detect the operating point of the replica OPAMP and generate appropriate signals to control the switches of the BWCS. The proposed preamplifier was fabricated using a general-purpose complementary metal-oxide-silicon field effect transistor 0.18 μm process and verified through a test up to 230 kGy (SiO2) at a rate of 10.46 kGy (SiO2)/h. The code of the BWCS control circuit varied with the total radiation dose. During the verification test, the initial value of the digital code was 39, and a final value of 30 was observed. Furthermore, the preamplifier output exhibited a maximum variation error of 2.39%, while the maximum rise-time error was 1.96%. A minimum signal-to-noise ratio of 49.64 dB was measured.
Abstract
This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects. The CSA consists of an operational amplifier (OPAMP) with a 6-bit binary weighted current source (BWCS) and feedback network. The replica circuit is utilized to compensate for the TID effects of the CSA. Two comparators can detect the operating point of the replica OPAMP and generate appropriate signals to control the switches of the BWCS. The proposed preamplifier was fabricated using a general-purpose complementary metal-oxide-silicon field effect transistor 0.18 μm process and verified through a test up to 230 kGy (SiO2) at a rate of 10.46 kGy (SiO2)/h. The code of the BWCS control circuit varied with the total radiation dose. During the verification test, the initial value of the digital code was 39, and a final value of 30 was observed. Furthermore, the preamplifier output exhibited a maximum variation error of 2.39%, while the maximum rise-time error was 1.96%. A minimum signal-to-noise ratio of 49.64 dB was measured.
참고문헌 (30)
- M. Jeong, "Development of charge sensitive amplifiers based on various circuit board substrates and evaluation of radiation hardness characteristics", Nucl. Eng. Technol, 52(7), pp.1503~1510 (2020)
- M. Massarotto, "Two-stage differential charge and transresistance amplifiers", IEEE Trans. Instrum. Meas, 57(2), pp.309~320 (2008)
- C. Lee, "Integrated circuit design for radiationhardened charge-sensitive amplifier survived up to 2 Mrad", Sensors, 20(10) (2020)
- H. Jeon, "Radiation-hardened sensor interface circuit for monitoring severe accidents in nuclear power plants", IEEE Trans. Nucl. Sci, 67(7), pp.1738~1745 (2020)
- G. Langfelder, "Design criteria of low-power oscillators for consumer-grade MEMS resonant sensors", IEEE Trans. Ind. Electron, 61(1), pp.567~574 (2014)
- B. George, "Advances in capacitive, eddy current, and magnetic displacement sensors and corresponding interfaces", IEEE Trans. Ind. Electron, 64(12), pp.9595~9607 (2017)
- J. Kim, "Performance enhancement of capacitive-type torque sensor by using resonant circuit", IEEE Trans. Ind. Electron, 69(1), pp.560~569 (2022)
- I. Kwon, "Compensation of the detector capacitance presented to charge-sensitive preamplifiers using the Miller effect", Nucl. Instrum. Methods Phys. Res. Sect. A Accel. Spectrom. Detect. Assoc. Equip, 784, pp.220~225 (2015)
- I. Kwon, "Experimental validation of charge-sensitive amplifier configuration that compensates for detector capacitance", IEEE Trans. Nucl. Sci, 63(2), pp.1202~1208 (2016)
- G. F. Knoll, "Radiation Detection and Measurement" (2010), WILEY
- T. S. Nidhin, "Understanding radiation effects in SRAM-based field programmable gate arrays for implementing instrumentation and control systems of nuclear power plants", Nucl. Eng. Technol, 49(8), pp.1589~1599 (2017)
- C. Sharma, "Impact of gamma radiation on 8051 microcontroller performance", Nucl. Eng. Technol, 54(12), pp.4422~4430 (2022)
- H. J. Barnaby, "Total-ionizing-dose effects in modern CMOS technologies", IEEE Trans. Nucl. Sci, 53(6), pp.3103~3121 (2006)
- J. D. Cressler, "Extreme Environment Electronics" (2013), CRC press
- W. Yang, "System-on-chip single event effect hardening design and validation using proton irradiation", Nucl. Eng. Technol, 55(3), pp.1015~1020 (2023)
- V. Gromov, "A radiation hard bandgap reference circuit in a standard 0. 13 μm CMOS technology", IEEE Trans. Nucl. Sci, 54(6), pp.2727~2733 (2007)
- B. M. McCue, "A Wide Temperature, Radiation Tolerant, CMOS-compatible precision voltage reference<newline", >for extreme radiation environment <newline, IEEE Trans. Nucl. Sci, pp.2013, 60(3)[DOI]
- V. Re, "Total ionizing dose effects on the noise performances of a 0. 13 μm CMOS technology", IEEE Trans. Nucl. Sci, 53(3), pp.1599~1606 (2006)
- M. Manghisoni, "Comparison of ionizing radiation effects in 0. 18 and 0. 25 μm CMOS technologies for analog applications", IEEE Trans. Nucl. Sci, 50(6), pp.1827~1833 (2003)
- D. M. Colombo, "Total dose effects on voltage references in 130-nm CMOS technology", IEEE Trans. Device Mater. Reliab, 18(1), pp.27~36 (2018)
- J. D. Cressler, "Environments and prediction tools, in: Extreme Environment Electronics" (2013), CRC Press
- "IAEA TECDOC Series, Assessment of equipment capability to perform reliability under severe accident conditions, IAEA-TECDOC-1818"[URL]
- W. J. Snoeys, "A new NMOS layout structure for radiation tolerance", IEEE Trans. Nucl. Sci, 49(4), pp.1829~1833 (2002)
- T. Vergine, "A 65 nm rad-hard bandgap voltage reference for LHC environment", IEEE Trans. Nucl. Sci, 63(3), pp.1762~1767 (2016)
- R. W. Blaine, "Single-event-hardened cmos operational amplifier design", IEEE Trans. Nucl. Sci, 59(4), pp.803~810 (2012)
- Atkinson, "RHBD technique for single-event charge cancellation in foldedcascode amplifiers", IEEE Trans. Nucl. Sci, 60(4), pp.2756~2761 (2013)
- H. Xu, "A 78. 5-dB SNDR radiation-and metastability-tolerant two-step split SAR ADC operating up to 75 MS", s with 24. 9-mW power consumption in 65-nm CMOS, 2019, pp.54(2), 441~451
- K. J. Shetler, "Radiation hardening of voltage references using chopper stabilization", IEEE Trans. Nucl. Sci, 62(6), pp.3064~3071 (2015)
- M. Seung, "Cold junction compensation technique of thermocouple thermometer using radiation-hardened-by-design voltage reference for harsh radiation environment", IEEE Trans. Instrum. Meas, 71, pp.1~7 (2022)
- M. Manghisoni, "Submicron CMOS technologies for low-noise analog front-end circuits", IEEE Trans. Nucl. Sci, 49(4), pp.1783~1790 (2022)
