태양전지용 계면소재의 방사선 영향 평가
Radiation Effects of Photovoltaic Interfacial Materials
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초록
This study was to investigate the radiation effects of interfacial materials widely used innext generation photovoltaic cells. To evaluate film morphology, atomic contents, work-function valuesand charge carrier mobility of PEDOT : PSS, PrGO and SrGO-based hole transport interfacial materials,we conducted AFM, TEM, XPS, UPS and SCLC analyses, respectively. As a result, we found that filmmorphologies of the above interfacial materials showed a similar RMS roughness values regardlessof gamma irradiation up to 20 kGy. In addition, work-function values of PEDOT : PSS was increased withan increase in gamma irradiation due to the destruction of aromatic structure of PEDOT segments. Thework-function value of PrGO was increased when irradiated up to 10 kGy gamma irradiation, however;further gamma irradiation to 20 kGy leads to decrease in work-function of PrGO due to reduction reactionof PrGO material. On the other hands, there was a similar work-function values for the SrGO interfacialmaterial with and without gamma irradiation. To evaluate charge carrier mobility of PEDOT : PSS, PrGOand SrGO, we fabricated hole-only devices. As a result, carrier mobility of PEDOT : PSS material wasgradually decreased with increasing gamma irradiation dose due to destruction of resonance structure ofPEDOT segments. On the other hands, carrier mobility values of PrGO and SrGO-based hole-only deviceshad very similar values regardless of gamma irradiation.
Abstract
This study was to investigate the radiation effects of interfacial materials widely used innext generation photovoltaic cells. To evaluate film morphology, atomic contents, work-function valuesand charge carrier mobility of PEDOT : PSS, PrGO and SrGO-based hole transport interfacial materials,we conducted AFM, TEM, XPS, UPS and SCLC analyses, respectively. As a result, we found that filmmorphologies of the above interfacial materials showed a similar RMS roughness values regardlessof gamma irradiation up to 20 kGy. In addition, work-function values of PEDOT : PSS was increased withan increase in gamma irradiation due to the destruction of aromatic structure of PEDOT segments. Thework-function value of PrGO was increased when irradiated up to 10 kGy gamma irradiation, however;further gamma irradiation to 20 kGy leads to decrease in work-function of PrGO due to reduction reactionof PrGO material. On the other hands, there was a similar work-function values for the SrGO interfacialmaterial with and without gamma irradiation. To evaluate charge carrier mobility of PEDOT : PSS, PrGOand SrGO, we fabricated hole-only devices. As a result, carrier mobility of PEDOT : PSS material wasgradually decreased with increasing gamma irradiation dose due to destruction of resonance structure ofPEDOT segments. On the other hands, carrier mobility values of PrGO and SrGO-based hole-only deviceshad very similar values regardless of gamma irradiation.
참고문헌 (5)
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